| PART |
Description |
Maker |
| PCR406 PCR406-5 PCR406-6 |
KPT 10C 10#20 SKT PLUG
UTC PCR406 silicon controlled rectifiers are high performance planner diffused PNP devices 0.8 A, 400 V, SCR, TO-92
UTC PCR406 silicon controlled rectifiers are high performance planner diffused PNP devices 星期PCR406可控硅整流器是高性能的规划扩散PNP器件
UTC PCR406 silicon controlled rectifiers are high performance planner diffused PNP devices
|
UNISONIC TECHNOLOGIES CO LTD
Unisonic Technologies Co., Ltd.
UTC[Unisonic Technologies]
|
| IRKLF102-08HJ IRKLF112-08HN IRKLF102-06HK IRKLF102 |
164.85 A, 800 V, SCR
Silicon Controlled Rectifier, 250 A, 800 V, SCR, POWER, INT-A-PAK-5
Silicon Controlled Rectifier, 164.85 A, 600 V, SCR
Silicon Controlled Rectifier, 164.85 A, 1200 V, SCR
|
Vishay Semiconductors
|
| BF1009S Q62702-F1628 Q62702-C2595 Q62702-C2607 Q62 |
NPN Silicon AF Transistors (For AF driver and output stages High collector current)
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network)
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| 2N1795F 2N1798F 2N1792F 2N1793F 2N1794F 2N1797F 2N |
Silicon Controlled Rectifiers (fase)
Silicon Controlled Rectifier; Package: TO-83; IT (Av) (A): 70; VTM (V): 2.1; VGT (V): 3; IGT (µA): 70000; tq (nsec): 40000; Vrrm (V): 400; 110 A, SCR, TO-208AD
|
Microsemi Corporation
Microsemi, Corp.
|
| ISOPAC01 ISOPAC0103 ISOPAC0104 ISOPAC0111 ISOPAC01 |
High Current High density Isolated Silicon Power Rectifier(????靛?600V锛?ぇ?垫?锛??瀵?害锛??绂诲?锛??????存???
High Current High density Isolated Silicon Power Rectifier(????靛?1000V锛?ぇ?垫?锛??瀵?害锛??绂诲?纭?????娴??)
High-Current Isolated Rectifier Assemblies. 150 V-1000 V. 10 nS - 2 microseconds 大电流隔离整流器大会150 V000五，10纳秒- 2微秒
HIGH CURRENT ISOLATED RECTIFIER ASSEMBLY
High Current High density Isolated Silicon Power Rectifier(????靛?1000V锛?ぇ?垫?锛??瀵?害锛??绂诲?锛??????存???
|
International Rectifier, Corp.
Semtech Corporation
|
| S2600B S2600D S2600M S2600N |
High Voltage, Medium Current Silicon Controlled Rectifiers
|
New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conduct...
|
| S6000N S6000D S6000M |
High Voltage, Medium Current Silicon Controlled Rectifiers 高电压，电流中可控硅整流装置
|
GE Security, Inc.
GE[General Semiconductor]
|
| BT151-600 BT151 |
600V Vdrm 12A Sensitive Gate Silicon Controlled Rectifier, 1.7@23AV Peak On-State Voltage, 200V/μs Rise of Off-State Voltage
Silicon Controlled Rectifiers
|
SemiWell Semiconductor
|
| NX5P2924B |
Logic controlled high-side power switch
|
NXP Semiconductors
|
| MCR100-8G MCR100-4G MCR100-004G |
Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors 0.8 A, 200 V, SCR, TO-92
Sensitive Gate Silicon Controlled Rectifier; Package: TO-92 (TO-226) 5.33mm Body Height; No of Pins: 3; Container: Bulk; Qty per Container: 5000
|
On Semiconductor
|
| BF2040 Q62702-F1775 |
Silicon N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 5V)
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V)
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
