| PART |
Description |
Maker |
| 0415CDMCBDS-4R7MC 0415CDMCBDS-R47MC 0415CDMCBDS-1R |
Magnetically shielded
|
Sumida Corporation
|
| MDT1608-CH |
Magnetically shielded
|
TOKO, Inc
|
| MBH10145C |
Magnetically shielded
|
TOKO, Inc
|
| 252010CDMCDS 252010CDMCDS-R47MC 252010CDMCDS-1R5MC |
SMD Power Inductor, Magnetically shielded
|
Sumida Corporation
|
| TM12-MSM 4410.9014 |
Circuit Breaker for Equipment thermal-magnetically with Metal Actuator
|
Schurter Inc.
|
| RB-11-10-BU1-C |
C-Series Remote Operated Module
|
Carling Technologies
|
| FX601A |
TONE OPERATED MONOSTABLE TIMER
|
CONSUMER MICROCIRCUITS LIMITED
CML Microcircuits
|
| K6R1016C1D-JECII10/12 K6R1016V1D-JTICI08/10 K6R101 |
64K*16 bit high-speed CMOS static RAM operated at commercial and industrial temperature ranges
128K x 8 Bit High-Speed CMOS Static RAM(3.3V Operating) Data Sheet
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. 在商业和工业温度范围运作64Kx16位高速CMOS静态RAM3.3V的）
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. 64Kx16位高速CMOS静态RAM.3V的）在商业和工业温度范围操作
|
Samsung Electronic
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| XC2C64-7VQ XC2C64-4CP56C XC2C64-4PC44C XC2C64-4VQ1 |
Industries best 0.18 micron CMOS CPLD
This lends power savings to High-end Communication equipment and speed to battery operated devices. FLASH PLD, 4 ns, PQCC44
This lends power savings to High-end Communication equipment and speed to battery operated devices. FLASH PLD, 4 ns, PQFP100
This lends power savings to High-end Communication equipment and speed to battery operated devices. FLASH PLD, 7.5 ns, PQCC44
|
Xilinx, Inc.
XILINX[Xilinx, Inc]
|
| VXZ23 VXH22 VXA21 VXA22 VXR23 VXR21 VXP22 VXP21 VX |
Direct Operated 3 Port Solenoid Valve
|
SMC
|
