| PART |
Description |
Maker |
| 1N4508A |
Diode Switching 600V 22A 2-Pin DO-4
|
New Jersey Semiconductors
|
| HFA35HB60SCS |
600V 22A Hi-Rel Ultra-Fast Discrete Diode in a TO-254AA package
|
International Rectifier
|
| 1N5619 |
Diode Switching 600V 2A 2-Pin Case G-2
|
New Jersey Semiconductor
|
| 40HFLR60S02 40HFLR20S05 |
Diode Switching 600V 40A 2-Pin DO-5
Diode Switching 200V 40A 2-Pin DO-5
|
New Jersey Semiconductor
|
| RJP60V0DPM-80T2 |
600V - 22A - IGBT Application: Inverter
|
Renesas Electronics Corporation
|
| RJP60V0DPM-80-15 |
600V - 22A - IGBT Application: Inverter
|
Renesas Electronics Corporation
|
| RJP60V0DPM |
600V - 22A - IGBT Application: Inverter
|
Renesas Electronics Corporation
|
| BAR63-02L BAR63-02V BAR63-07L4 BAR63-04W BAR63-03W |
Silicon PIN Diodes 硅PIN二极
PIN Diodes - PIN diode for high-speed switching of RF signals
PIN Diodes - High-Speed switching diode in ultra-small SC79 Package
|
INFINEON[Infineon Technologies AG]
|
| FE3B FE3D FE3C |
Diode Switching 100V 3A 2-Pin Case G-4
Diode Switching 200V 3A 2-Pin Case G-4
Diode Switching 150V 3A 2-Pin Case G-4
|
New Jersey Semiconductor
|
| FCPF22N60NT FCP22N60N |
N-Channel MOSFET 600V, 22A, 0.165W
600V N-Channel MOSFET, SupreMOS™; 3-TO-220 22 A, 600 V, 0.165 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Fairchild Semiconductor, Corp.
|
| IKA10N60T |
600V & 1200V IGBT for frequencies up to 10kHz for hard switching and up to 30kHz for soft switching with antiparallel diode. ...
IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
From old datasheet system
|
INFINEON[Infineon Technologies AG]
|
