PART |
Description |
Maker |
MTE8080P |
5mm Metal Can IR Emitter Infrared Emitter
|
MARKTECH[Marktech Corporate]
|
2SC5026 |
Silicon NPN Epitaxial Planar Type Low collector-emitter saturation voltage VCE(sat). High collector-emitter voltage (Base open) VCEO
|
TY Semicondutor TY Semiconductor Co., Ltd
|
LXHL-BR0B2 LXHL-BW0B2 LXHL-PR03 LXHL-PH01 LXHL-BM0 |
(LXHL-xxxx) Luxeon Emitter Luxeon Emitter 丽讯发射
|
luxeon ETC[ETC] List of Unclassifed Manufacturers Electronic Theatre Controls, Inc.
|
LD271LH LD271 LD271H LD271L |
INFRARD EMITTER GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter
|
Siemens Group SIEMENS[Siemens Semiconductor Group]
|
CM150DUS-12F |
IGBT Module; Continuous Collector Current, Ic:150A; Collector Emitter Saturation Voltage, Vce(sat):2V; Power Dissipation, Pd:520W; Collector Emitter Voltage, Vceo:600V 150 A, 600 V, N-CHANNEL IGBT
|
Powerex, Inc.
|
2SA539 |
Low frequency amplifier. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 400mW.
|
USHA India LTD
|
Q62703-Q1090 SFH483E7800 SFH483 |
GaAlAs-IR-Lumineszenzdiode GaAlAs Infrared Emitter 1 ELEMENT, INFRARED LED, 880 nm GaAlAs-IR-Lumineszenzdiode GaAlAs Infrared Emitter 发动器,红外Lumineszenzdiode GaAlA红外发射 From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
2SA954 |
Audio frequency amplifier. Collector-base voltage: Vcbo = -80V. Collector-emitter voltage: Vceo = -80V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 600mW.
|
USHA India LTD
|
OL3450L-A-SFMUJ-S2 OL4451L-B-AFMUJ-S1 OL5451L-B-AF |
FIBER OPTIC LASER DIODE MODULE EMITTER, 1300-1320nm, PANEL MOUNT, THROUGH HOLE MOUNT, MU-J CONNECTOR FIBER OPTIC LASER DIODE MODULE EMITTER, 1480-1500nm, PANEL MOUNT, THROUGH HOLE MOUNT, MU-J CONNECTOR FIBER OPTIC LASER DIODE MODULE EMITTER, 1510-1530nm, PANEL MOUNT, THROUGH HOLE MOUNT, MU-J CONNECTOR FIBER OPTIC LASER DIODE MODULE EMITTER, 1620-1640nm, PANEL MOUNT, THROUGH HOLE MOUNT, MU-J CONNECTOR
|
LAPIS SEMICONDUCTOR CO LTD
|