| PART |
Description |
Maker |
| Q6040M9 Q7040M9 Q4040M9 Q2040M9 Q8040M9 Q5040M9 Q2 |
TRIAC|600V V(DRM)|40A I(T)RMS|TO-218
TRIAC|700V V(DRM)|40A I(T)RMS|TO-218
TRIAC|800V V(DRM)|40A I(T)RMS|TO-218
TRIAC|500V V(DRM)|40A I(T)RMS|TO-218
TRIAC|200V V(DRM)|40A I(T)RMS|TO-218VAR
TRIAC|400V V(DRM)|40A I(T)RMS|TO-218VAR
TRIAC|700V V(DRM)|15A I(T)RMS|TO-220 可控硅| 700V的五（DRM）的| 15A条口（T）的有效值|20
TRIAC|400V V(DRM)|15A I(T)RMS|TO-220
TRIAC|400V V(DRM)|25A I(T)RMS|TO-220
TRIAC|800V V(DRM)|25A I(T)RMS|TO-220
|
Motorola Mobility Holdings, Inc.
|
| SSG50C120 SSG50C60 SSG50C100 SSG50C40 |
TRIAC|1.2KV V(DRM)|50A I(T)RMS|TO-208VARM8
TRIAC|600V V(DRM)|50A I(T)RMS|TO-208VARM8 可控硅| 600V的五（DRM）的| 50A条口（T）的有效值|08VARM8
TRIAC|1KV V(DRM)|50A I(T)RMS|TO-208VARM8
TRIAC|400V V(DRM)|50A I(T)RMS|TO-208VARM8
|
|
| TW7N06FZ2 TW5N06FZ TW5N06FZ3 |
TRIAC|600V V(DRM)|8A I(T)RMS|TO-220 可控硅| 600V的五（DRM）的| 8A条口（T）的有效值|20
TRIAC|600V V(DRM)|5A I(T)RMS|TO-220 可控硅| 600V的五（DRM）的| 5A条口（T）的有效值|20
|
Glenair, Inc.
|
| BTA06-700C BTA06-400B BTA06-400C BTA06-700B BTB06- |
TRIAC|700V V(DRM)|6A I(T)RMS|TO-220
TRIAC|400V V(DRM)|6A I(T)RMS|TO-220 可控硅| 400V五（DRM）的| 6A条口T）的有效值|20
|
Linear Technology, Corp.
|
| BTA04-800S BTA04-200S BTB04-800S |
TRIAC|200V V(DRM)|4A I(T)RMS|TO-220
TRIAC|800V V(DRM)|4A I(T)RMS|TO-220 可控硅| 800V的五（DRM）的| 4A条口（T）的有效值|20
|
STMicroelectronics N.V.
|
| TPDV225 TPDV125 TPDV425 |
TRIAC|200V V(DRM)|25A I(T)RMS|TO-218 可控硅| 200伏五（DRM）的| 25A条口（T）的有效值|18
TRIAC|400V V(DRM)|25A I(T)RMS|TO-218
|
Delta Electronics, Inc.
|
| RCR150BX12 RCR150BX16 RCR150BX20 RCR150BX24 FR500A |
THYRISTOR|REVERSE-CONDUCTING|600V V(DRM)|STF-M20
THYRISTOR|REVERSE-CONDUCTING|800V V(DRM)|STF-M20
THYRISTOR|REVERSE-CONDUCTING|1KV V(DRM)|STF-M20
THYRISTOR|REVERSE-CONDUCTING|1.2KV V(DRM)|STF-M20
THYRISTOR|REVERSE-CONDUCTING|600V V(DRM)|TO-200VAR84 晶闸管|反向导电| 600V的五（DRM）的|00VAR84
THYRISTOR|REVERSE-CONDUCTING|600V V(DRM)|TO-200VAR50
THYRISTOR|REVERSE-CONDUCTING|600V V(DRM)|TO-200AB
THYRISTOR|REVERSE-CONDUCTING|800V V(DRM)|TO-200VAR50
|
Rochester Electronics, LLC
|
| NTE5585 NTE5580 NTE5582 NTE5584 |
Silicon controlled rectiifier for phase control applications. Repetitive peak off-state and reverse voltage Vdrm,Vrrm = 1200V. Max RMS on-state current It(rms) = 235A.
Silicon Controlled Rectifier for Phase Control Applications
Silicon controlled rectiifier for phase control applications. Repetitive peak off-state and reverse voltage Vdrm,Vrrm = 600V. Max RMS on-state current It(rms) = 235A.
|
NTE[NTE Electronics]
|
| CQ89NS CQ89DS CQ89MS CQ89BS |
2.0 AMP TRIAC 400 THRU 800 VOLTS
TRIAC|200V V(DRM)|2A I(T)RMS|SOT-89 可控硅| 200伏五（DRM）的|甲口（T）的有效值|采用SOT - 89
|
Central Semiconductor C...
CENTRAL[Central Semiconductor Corp]
Infineon Technologies AG
|
| CQ89N CQ89D CQ89M CQ89B |
2.0 AMP TRIAC 400 THRU 800 VOLTS
TRIAC|200V V(DRM)|1A I(T)RMS|SOT-89 可控硅| 200伏五（DRM）的| 1A条口T）的有效值|采用SOT - 89
|
Central Semiconductor C...
CENTRAL[Central Semiconductor Corp]
Central Semiconductor Corp.
Teridian Semiconductor, Corp.
|
| ST303C04CFL0 ST303C04CFN0 ST303C08CFL0 ST303C08CFN |
Silicon Controlled Rectifier, 1180 A, 1000 V, SCR, TO-200AB, METAL CASE WITH CERAMIC INSULATOR, EPUK-3
MAX II CPLD 1270 LE 256-FBGA 400V 1180A逆变晶闸管采用TO - 200AB（电子北辰）封装
Cyclone II FPGA 35K FBGA-672 800V180A逆变晶闸管采用TO - 200AB（电子北辰）封装
400V 1180A Inverter Thyristor in a TO-200AB (E-Puk) package
800V 1180A Inverter Thyristor in a TO-200AB (E-Puk) package
1000V 1180A Inverter Thyristor in a TO-200AB (E-Puk) package
|
Vishay Semiconductors
TE Connectivity, Ltd.
International Rectifier
|
