| PART |
Description |
Maker |
| STD6N65M2 STB6N65M2 |
Zener-protected
N-channel 650 V, 1.2 Ohm typ., 4 A MDmesh M2 Power MOSFET in D2PAK package
N-channel 650 V, 1.2 Ohm typ., 4 A MDmesh M2 Power MOSFET in DPAK package
|
STMicroelectronics
ST Microelectronics
|
| STW88N65M5 STWA88N65M5 |
N-channel 650 V, 0.024 Ohm typ., 84 A MDmesh M5 Power MOSFET in TO-247 package
N-channel 650 V, 0.024 Ohm typ., 84 A MDmesh M5 Power MOSFET in TO-247 long leads package
|
ST Microelectronics
|
| S3902 S3903 S3903-1024Q S3903-512Q |
MOSFET, Switching; VDSS (V): 400; ID (A): 17; Pch : -; RDS (ON) typ. (ohm) @10V: 0.25; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V
MOSFET, Switching; VDSS (V): 450; ID (A): 14; Pch : -; RDS (ON) typ. (ohm) @10V: 0.43; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V
NMOS linear image sensor Current output, high UV sensitivity, excellent linearity, low power consumption
MOSFET, Switching; VDSS (V): 450; ID (A): 22; Pch : -; RDS (ON) typ. (ohm) @10V: 0.25; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1800; toff (µs) typ: -; Package: TO-3P
|
Hamamatsu Photonics
|
| STW57N65M5 |
N-channel 650 V, 0.056 Ohm typ., 42 A MDmesh(TM) V Power MOSFET in TO-247 package
|
ST Microelectronics
|
| STW34N65M5 STI34N65M5 |
N-channel 650 V, 0.09 Ohm, 28 A MDmesh(TM) V Power MOSFET in TO-247 package
N-channel 650 V, 0.09 Ohm typ., 28 A MDmesh(TM) V Power MOSFET in I2PAK package
|
ST Microelectronics
|
| STL45N65M5 |
N-channel 650 V, 0.075 Ohm typ., 22.5 A MDmesh(TM) V Power MOSFET in a PowerFLAT 8x8 HV package
|
ST Microelectronics
|
| STL31N65M5 |
N-channel 650 V, 0.135 Ohm typ., 15 A MDmesh(TM) V Power MOSFET in PowerFLAT(TM) 8x8 HV package
|
ST Microelectronics
|
| STE139N65M5 |
N-channel 650 V, 0.014 Ohm typ., 130 A, MDmesh(TM) V Power MOSFET in ISOTOP package
|
ST Microelectronics
|
| S3901-FX |
MOSFET, Switching; VDSS (V): 400; ID (A): 15; Pch : 100; RDS (ON) typ. (ohm) @10V: 0.34; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1100; toff (µs) typ: 0.077; Package: LDPAK (S)- (1)
|
Hamamatsu Photonics
|
| STFW69N65M5 STW69N65M5 |
N-channel 650 V, 0.037 Ohm, 58 A MDmesh(TM) V Power MOSFET in TO-3PF package
N-channel 650 V, 0.037 Ω typ., 58 A MDmesh?V Power MOSFET in TO-3PF and TO-247 packages
N-channel 650 V, 0.037 Ω typ., 58 A MDmesh V Power MOSFET in TO-3PF and TO-247 packages
|
ST Microelectronics
STMicroelectronics
|
| STL40C30H3LL |
N-channel 30 V, 0.019 Ohm typ., 10 A, P-channel 30 V, 0.024 Ohm typ., 8 A STripFET(TM) V Power MOSFET in a PowerFLAT(TM) 5x6 d. i. package
|
ST Microelectronics
|
| STS8C6H3LL |
N-channel 30 V, 0.019 Ohm typ., 8 A, P-channel 30 V, 0.024 Ohm typ., 6 A STripFET(TM) Power MOSFET in a SO-8 package
|
ST Microelectronics
|
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