| PART |
Description |
Maker |
| MMBZ5228B |
Planar Die Construction
|
TY Semiconductor Co., L...
|
| MMBT2222 |
Epitaxial planar die construction
|
MAKO SEMICONDUCTOR CO.,...
|
| MMSTA13 |
Epitaxial Planar Die Construction
|
TY Semiconductor Co., Ltd
|
| MMBT2222 |
Epitaxial planar die construction.
|
TY Semiconductor Co., Ltd
|
| A42 |
Epitaxial planar die construction. Ideal for medium power amplification and switching.
NPN High Voltage Transistors
|
TY Semiconductor Co., L...
TY Semicondutor
|
| GBJ35005 |
Glass passivated die construction
|
Sangdest Microelectroni...
|
| DXO885915-5 |
Planar Resonator Construction
|
SYNERGY MICROWAVE CORPO...
|
| SB20100 |
Guard Ring Die Construction for Transient Protection
|
Sangdest Microelectroni...
|
| CPL |
Commercial Power, Axial Lead, Fireproof Inorganic Construction, Complete Welded Construction, High Thermal Conductivity and Moisture Resistance for Aqueous Board Wash Systems
|
Vishay
|
| TLE5009A16 |
Available as single die and dual die with separate supplies for each die
|
Infineon Technologies A...
|
| 2SPT6341SD |
MultiEpitaxial Planar NPN Power Transistor Die
|
Solid States Devices, Inc
|
| 1N4007G 1N4004G 1N4001G 1N4002G 1N4002 1N4006 1N40 |
Rectifiers(整流 1 A, 1000 V, SILICON, SIGNAL DIODE
(1N4001G - 1N4007G) Rectifiers(Rugged glass package / using a high temperature alloyed construction)
IC REG VOLT 4.8V 240MA SOT-23
Rectifiers(Rugged glass package/ using a high temperature alloyed construction)
Rectifiers(Rugged glass package, using a high temperature alloyed construction) 1 A, 50 V, SILICON, SIGNAL DIODE
Rectifiers(Rugged glass package, using a high temperature alloyed construction) 整流器（坚固的玻璃封装，采用高温合金建设
Rectifiers(Rugged glass package, using a high temperature alloyed construction) 1 A, 400 V, SILICON, SIGNAL DIODE
|
PHILIPS[Philips Semiconductors]
http://
NXP Semiconductors N.V.
|
