| PART |
Description |
Maker |
| HSCH-5315 ASI30264 HSCH5315 |
From old datasheet system
BATCH MATCHED BEAM LEAD SCHOTTKY DIODE
|
Advanced Semiconductor
|
| BAT60B Q62702-A1189 BAT60 Q62702-A118 |
From old datasheet system
Silicon Schottky Diode (Rectifier Schottky diode for mobile communication Low voltage high inductane For power supply
|
SIEMENS[Siemens Semiconductor Group]
|
| BAT60A Q62702-A1188 |
Silicon Schottky Diode (Rectifier Schottky diode with extreme low VF drop for mobile communication For power supply 硅肖特基二极管（肖特基二极管整流极端VF为移动通信电源供应下降
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| NTLJF1103P NTLJF1103PT1G |
Power MOSFET Schottky Diode
Power MOSFET and Schottky Diode -8 V, -4.3 A, μCool? P-Channel, with 2.0 A Schottky Barrier Diode, 2 x 2 mm, WDFN
|
ON Semiconductor
|
| BAT66 BAT66-05 |
Schottky Diodes - Low power Diode in SOT22
Silicon Schottky Diode
|
INFINEON[Infineon Technologies AG]
|
| KDR411S |
Schottky Barrier Diode
SCHOTTKY BARRIER TYPE DIODE(LOW POWER RECTIFICATION, FOR SWITCHING POWER SUPPLY)
|
Korea Electronics (KEC)
KEC(Korea Electronics)
|
| IRF7524D1 |
Co-packaged HEXFET Power MOSFET and Schottky Diode(同封HEXFET晶体管和肖特基二极管)
FETKY⑩ MOSFET & Schottky Diode(Vdss=-20V, Rds(on)=0.27ohm, Schottky Vf=0.39V)
HEXFET? Power MOSFET
FETKY MOSFET & Schottky Diode(Vdss=-20V, Rds(on)=0.27ohm, Schottky Vf=0.39V)
|
IRF[International Rectifier]
|
| NTLGF3402PT1G NTLGF3402P NTLGF3402PT2G |
Power MOSFET and Schottky Diode −20 V, −3.9 A FETKY, P−Channel, 2.0 A Schottky Barrier Diode, DFN6
|
ON Semiconductor
|
| STPSC1006 |
Schottky Barrier 600 V power Schottky silicon carbide diode
|
ST Microelectronics
|
| STPSC806 |
Schottky Barrier 600 V power Schottky silicon carbide diode
|
ST Microelectronics
|
| NTHD3101F NTHD3101FT1 NTHD3101FT1G NTHD3101FT3 NTH |
Power MOSFET and Schottky Diode(20V, 4.4A???MOSFET)
Power MOSFET and Schottky Diode(20V, 4.4A功率MOSFET) 功率MOSFET和肖特基二极管（20V的，4.4A功率MOSFET的）
|
ON Semiconductor
|
