| PART |
Description |
Maker |
| ST2305AS23RG |
DMOS trench technology
|
TY Semiconductor Co., Ltd
|
| ST2306SRG |
DMOS trench technology
|
TY Semiconductor Co., Ltd
|
| STN8205D STN8205DST6RG |
DMOS trench technology
|
TY Semiconductor Co., Ltd
|
| STN4416 |
STN4416 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| STN4440 |
STN4440 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| ST7400 |
ST7400 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| STP4403 |
STP4403 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| STP4435A |
STP4435A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| STN9926 |
The STN9926 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
|
Stanson Technology
|
| FGA15N120ANTD FGA15N120ANTD07 FGA15N120ANTDF109 FG |
1200V NPT Trench IGBT
NPT Trench Technology, Positive temperature coefficient
Extremely enhanced avalanche capability
|
Fairchild Semiconductor
List of Unclassifed Manufacturers
|
| IRF7530TR |
Trench Technology
|
International Rectifier
|
| 10-FZ122PA150SC-P990F08 10-F0122PA150SC-P990F09 |
Trench Fieldstop IGBT technology
|
Vincotech
|
