PART |
Description |
Maker |
ST2305AS23RG |
DMOS trench technology
|
TY Semiconductor Co., Ltd
|
ST2304SRG |
DMOS trench technology
|
TY Semiconductor Co., Ltd
|
ST2303SRG |
DMOS trench technology
|
TY Semiconductor Co., Ltd
|
ST3401SRG |
DMOS trench technology
|
TY Semiconductor Co., Ltd
|
STN4850 |
STN4850 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
ST2304SRG |
ST2304SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
STN9926AA |
The STN9926AA is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
|
Stanson Technology
|
STN4822 |
STN4822 is the Dual N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology.
|
Stanson Technology
|
STP7401 STP7401S32RG |
STP7401 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. STP7401 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
SSF1116A |
Advanced trench process technology
|
Silikron Semiconductor Co.,LTD. Silikron Semiconductor Co.,...
|