| PART |
Description |
Maker |
| ST2305AS23RG |
DMOS trench technology
|
TY Semiconductor Co., Ltd
|
| ST2306SRG |
DMOS trench technology
|
TY Semiconductor Co., Ltd
|
| ST2318SRG |
ST2318SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| ST7400 |
ST7400 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| STN4546 |
STN4526 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| ST3422A |
The ST3422A is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| STP4931 |
STP4931 is the dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| AOT10T60P |
Trench Power AlphaMOS-II technology
|
TY Semiconductor Co., Ltd
|
| 10-FZ122PA150SC01-P990F18 |
Trench Fieldstop IGBT technology
|
Vincotech
|
| SSF1116 |
Advanced trench process technology
|
Silikron Semiconductor Co.,LTD.
Silikron Semiconductor Co.,...
|
