| PART |
Description |
Maker |
| MPS6573 MPS6576 |
NPN SILICON ANNULAR TRANSISTORS
|
New Jersey Semi-Conductor Products, Inc.
|
| 2N4853 2N4851 2N4852 |
SILICON ANNULAR UNIJUNCTION TRANSISTORS
|
New Jersey Semi-Conductor Products, Inc.
|
| 2N4931 2N4928 |
HIGH-VOLTAGE PNP SILICON ANNULAR TRANSISTORS
|
New Jersey Semi-Conductor Products, Inc.
|
| BD787 BD786 |
COMPLEMENTARY PLASTIC SILICON ANNULAR POWER TRANSISTORS
|
New Jersey Semi-Conduct...
|
| 2N2906 |
(2N2904A - 2N2907A) PNP Silicon Annular Hermetic Transistors
|
Motorola
|
| 2N5431 |
PN SILICON ANNULAR UNIJUNCTION TRANSITOR
|
Digitron Semiconductors
|
| BC414 BC413 BC416 BC415 |
SILICON AF LOW NOISE SMALL SIGNAL TRANSISTORS
SILICON PLANAR EPITAXIAL TRANSISTORS
|
Micro Electronics
|
| 121-001-09 121-001-12 121-001-16 121-001-20 121-00 |
72 Annular Convoluted Tubing Thermally Stabilized Kynar
|
Glenair, Inc.
|
| 121-004-09 121-004-12 121-004-16 121-004-20 121-00 |
72 Annular Convoluted Tubing Thermally Stabilized Kynar
|
Glenair, Inc.
|
| 2N6290 2N6473 2N6476 2N6293 2N6110 2N6107 2N6108 2 |
EPITAXIAL-BASE/ SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
SMA FEMALE POWER DIVIDER; NUMBER OF OUTPUT PORTS: 4; FREQUENCY RANGE: 0.5 - 1 GHz; MINIMUM ISOLATION: 20 dB; VSWR: 1.30 MAXIMUM; MAXIMUM INSERTION
EPITAXIAL-BASE SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
|
Boca Semiconductor Corp.
BOCA[Boca Semiconductor Corporation]
|
