PART |
Description |
Maker |
STB24NM60N |
N-channel 600 V, 0.168, 17 A MDmesh II Power MOSFET
|
STMicroelectronics
|
CM75E3U-12H |
Chopper IGBTMOD 75 Amperes/600 Volts 75 A, 600 V, N-CHANNEL IGBT
|
Powerex, Inc. POWEREX[Powerex Power Semiconductors]
|
APT43F60B2 APT43F60L |
N-Channel FREDFET Power FREDFET; Package: T-MAX™ [B2]; ID (A): 45; RDS(on) (Ohms): 0.15; BVDSS (V): 600; 45 A, 600 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
|
Microsemi Corporation Microsemi, Corp.
|
HGT1S20N60C3S HGTG20N60C3 HGTP20N60C3 G20N60C3 HGT |
45 A, 600 V, UFS N-Channel IGBT Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0654-6 53 45 A, 600 V, N-CHANNEL IGBT, TO-263AB 45A, 600V, UFS Series N-Channel IGBT 5A00V的,的ufs系列N沟道IGBT
|
FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor, Corp.
|
IRF9520 FN2281 |
6A, 100V, 0.600 Ohm, P-Channel Power MOSFET(6A, 100V, 0.600 惟, P娌?????MOS?烘?搴??) From old datasheet system 6A 100V 0.600 Ohm P-Channel Power MOSFET 6A/ 100V/ 0.600 Ohm/ P-Channel Power MOSFET
|
INTERSIL[Intersil Corporation]
|
CM30TF-12H |
122 x 32 pixel format, LED Backlight available 30 A, 600 V, N-CHANNEL IGBT Six-IGBT IGBTMOD 30 Amperes/600 Volts
|
Powerex, Inc. POWEREX[Powerex Power Semiconductors]
|
CM100TJ-12F |
128 x 64 pixel format, LED or EL Backlight available 100 A, 600 V, N-CHANNEL IGBT Trench Gate Design 100 Amperes/600 Volts
|
Powerex, Inc. POWEREX[Powerex Power Semiconductors]
|
APT15GT60BRG |
Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: TO-247 [B]; BV(CES) (V): 600; VCE(sat) (V): 2; IC (A): 15; 30 A, 600 V, N-CHANNEL IGBT, TO-247
|
Microsemi, Corp.
|
FCPF600N60Z |
N-Channel SuperFETII MOSFET 600 V, 7.4 A, 600 m N-Channel SuperFET? II MOSFET
|
Fairchild Semiconductor
|
STF2LN60K3 STD2LN60K3 STU2LN60K3 |
N-channel 600 V, 4 Ohm typ., 2 A, SuperMESH3(TM) Power MOSFET in DPAK package N-channel 600 V, 4typ., 2 A SuperMESH3 Power MOSFET in DPAK, TO-220FP and IPAK packages
|
ST Microelectronics STMicroelectronics
|
IRG4PC50U IRG4PC50U-E |
55 A, 600 V, N-CHANNEL IGBT, TO-247AD 55 A, 600 V, N-CHANNEL IGBT, TO-247AC 600V UltraFast 8-60 kHz Discrete IGBT in a TO-247AC package INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.65V, @Vge=15V, Ic=27A) 绝缘栅双极晶体管(VCES和\u003d 600V电压的Vce(on)典\u003d 1.65V的,@和VGE \u003d 15V的,集成电路\u003d 27A条)
|
IRF[International Rectifier] International Rectifier, Corp.
|
STP11NM60N STX11NM60N STF11NM60N STB11NM60N STB11N |
N-channel 600 V, 0.37 Ω, 10 A MDmesh?/a> II Power MOSFET TO-220, TO-220FP, I2PAK, IPAK, DPAK, D2PAK N-channel 600 V, 0.37 Ω, 10 A MDmesh II Power MOSFET TO-220, TO-220FP, I2PAK, IPAK, DPAK, D2PAK 10 A, 600 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
|
STMicroelectronics
|
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