PART |
Description |
Maker |
T1G6003028-FS T1G6003028-FSEVB1 T1G6003028-FS-15 |
30W, 28V, DC ?6 GHz, GaN RF Power Transistor 30W, 28V, DC 6 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
T1G6000528-Q3 T1G6000528-Q3-EVB3 |
7W, 28V, DC ?6 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
CGH35030F |
30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX S BAND, GaN, N-CHANNEL, RF POWER, HEMFET
|
Cree, Inc.
|
0809LD60P |
Compant High-Insulation Power Relay, Polarized, 10A 60瓦,28V的,1 GHz的LDMOS的场效应 60 Watt / 28V / 1 Ghz LDMOS FET 60 WATT, 28V, 1 GHz LDMOS FET
|
Electronic Theatre Controls, Inc. GHZ Technology ETC[ETC] List of Unclassifed Manufacturers
|
CGH27015F |
15 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX
|
CREE[Cree, Inc]
|
MAPLST2122-030CF |
RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 30W, 28V
|
Tyco Electronics
|
TGA2612 TGA2612-15 |
6 to 12 GHz GaN LNA
|
TriQuint Semiconductor
|
MGFS45V2527A MGFS45V2527A11 |
2.7-3.5 GHz BAND / 30W
|
Mitsubishi Electric Semiconductor
|
CG2H30070F |
70 W, 0.5?.0 GHz, 28 V, RF Power GaN HEMT
|
Cree, Inc
|
T1G6001528-Q3 T1G6001528-Q3-15 T1G6001528-Q3-EVB1 |
DC ?6 GHz 18 W GaN RF Power Transistor DC 6 GHz 18 W GaN RF Power Transistor
|
TriQuint Semiconductor
|
TGA2622-CP TGA2622-CP-15 |
9 to 10 GHz 35 W GaN Power Amplifier
|
TriQuint Semiconductor
|
|