PART |
Description |
Maker |
T2G4003532-FS-15 |
30W, 32V DC 3.5 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
CGH35030F |
30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX S BAND, GaN, N-CHANNEL, RF POWER, HEMFET
|
Cree, Inc.
|
0809LD30P |
Compant High-Insulation Power Relay, Polarized, 10A 30 Watt / 28V / 1 Ghz LDMOS FET 30 WATT 28V 1 GHz LDMOS FET 30 WATT, 28V, 1 GHz LDMOS FET
|
Electronic Theatre Controls, Inc. GHZ Technology ETC[ETC] List of Unclassifed Manufacturers
|
ECE-V1HA101UP EEV-TG2A101M ERJ-8GEYJ100V GRM32NR72 |
30W GaN WIDEBAND POWER AMPLIFIER
|
RF Micro Devices
|
0809LD60P |
Compant High-Insulation Power Relay, Polarized, 10A 60瓦,28V的,1 GHz的LDMOS的场效应 60 Watt / 28V / 1 Ghz LDMOS FET 60 WATT, 28V, 1 GHz LDMOS FET
|
Electronic Theatre Controls, Inc. GHZ Technology ETC[ETC] List of Unclassifed Manufacturers
|
T1G4005528-FS T1G4005528-FS-EVB1 T1G6001528-Q3 T1G |
55W, 28V, DC ?3.5GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
CGHV27015S-AMP1 CGHV27015S-TR |
15 W, DC - 6.0 GHz, 50 V, GaN HEMT
|
Cree, Inc
|
MGFS45V2735 MGFS45V273511 |
2.7-3.5 GHz BAND / 30W
|
Mitsubishi Electric Semiconductor
|
MGFS45B2527B |
2.5-2.7 GHz BAND / 30W
|
Mitsubishi Electric Semiconductor
|
CGHV40100P-AMP |
100 W, DC - 4.0 GHz, 50 V, GaN HEMT
|
Cree, Inc
|
T1G6001528-Q3 T1G6001528-Q3-15 T1G6001528-Q3-EVB1 |
DC ?6 GHz 18 W GaN RF Power Transistor DC 6 GHz 18 W GaN RF Power Transistor
|
TriQuint Semiconductor
|