| PART |
Description |
Maker |
| TGA2611 |
2-6 GHz GaN LNA
|
TriQuint Semiconductor
|
| CG2H40010 CG2H40010F CG2H40010P |
10 W, DC - 6 GHz, RF Power GaN HEMT
|
Cree, Inc
|
| CGHV1J070D |
70 W, 18.0 GHz, GaN HEMT Die
|
Cree, Inc
|
| T1G6001528-Q3 T1G6001528-Q3-15 T1G6001528-Q3-EVB1 |
DC ?6 GHz 18 W GaN RF Power Transistor
DC 6 GHz 18 W GaN RF Power Transistor
|
TriQuint Semiconductor
|
| CMPA1C1D060D |
60 W, 12.7 - 13.25 GHz, 40 V, GaN MMIC, Power Amplifier
|
Cree, Inc
|
| T1G6000528-Q3 T1G6000528-Q3-EVB3 |
7W, 28V, DC ?6 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
| CMPA2735075D |
75 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier
|
Cree, Inc
|
| CMPA2060025D |
25 W, 2.0 - 6.0 GHz, GaN MMIC, Power Amplifier
|
Cree, Inc
|
| CMPA1D1E030D |
30 W, 13.75 - 14.5 GHz, 40 V, GaN MMIC, Power Amplifier
|
Cree, Inc
|
| CMPA801B025F-AMP CMPA801B025F-TB CMPA801B025P |
25 W, 8.5 - 11.0 GHz, GaN MMIC, Power Amplifier
|
Cree, Inc
|
| T2G4003532-FL-15 T2G4003532-FL-EVB1 T2G4003532-FS |
30W, 32V DC 3.5 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
|
