| PART |
Description |
Maker |
| BF622 Q62702-F1052 |
From old datasheet system
NPN Silicon High-Voltage Transistor (Suitable for video output stages in TV sets High breakdown voltage Low collector-emitter saturation voltage)
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
|
| NTE15049AC NTE15040-ECG NTE15048-ECG NTE15050AC NT |
Surge arrester (gas filled). Nominal breakdown voltage 240VAC.
Surge arrester (gas filled). Nominal breakdown voltage 600VDC
Surge arrester (gas filled). Nominal breakdown voltage 230VDC
Surge arrester (gas filled). Nominal breakdown voltage 300VDC
Surge arrester (gas filled). Nominal breakdown voltage 90VDC
Surge arrester (gas filled). Nominal breakdown voltage 110VDC
Surge Arresters (Gas Filled) 避雷器（充气
Surge arrester (gas filled). Nominal breakdown voltage 350VDC
Surge arrester (gas filled). Nominal breakdown voltage 145VDC
Surge arrester (gas filled). Nominal breakdown voltage 470VDC
Surge arrester (gas filled). Nominal breakdown voltage 75VDC
Surge arrester (gas filled). Nominal breakdown voltage 120VAC.
|
NTE Electronics, Inc.
|
| 2SB788 2SB0788 |
For High Breakdown Voltage Low-noise Amplification
|
PANASONIC[Panasonic Semiconductor]
|
| 2SD2240 2SB1463 |
Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification)
|
PANASONIC[Panasonic Semiconductor]
|
| 2SB792 2SB792A 2SD814 2SA1310 2SB0792A |
Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification)
|
PANASONIC[Panasonic Semiconductor]
|
| 2SC2632 2SA1124 |
Silicon NPN epitaxial planer type(For low-frequency high breakdown voltage amplification)
|
http://
PANASONIC[Panasonic Semiconductor]
|
| 2SD958 |
Silicon NPN epitaxial planer type(For high breakdown voltage and low-noise amplification)
|
PANASONIC[Panasonic Semiconductor]
|
| Q62702-F1066 BFN25 BFN27 Q62702-F977 |
PNP Silicon High-Voltage Transistors (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BFN36 BFN38 Q62702-F1303 Q62702-F1246 |
From old datasheet system
NPN Silicon High-Voltage Transistors (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage)
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| RD10JS RD11JS RD12JS RD13JS RD15JS RD16JS RD18JS R |
DO-34 Package Low noise, Sharp Breakdown characteristics 400 mW Zener Diode
8.2 V, 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-34
surface mount silicon Zener diodes 表面贴装硅稳压二极管
DO-34 Package Low noise/ Sharp Breakdown characteristics 400 mW Zener Diode
DO-34 Package Low noise Sharp Breakdown characteristics 400 mW Zener Diode
Constant Voltage diode 400mW DO-34
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| 2SC3906K |
High breakdown voltage.Collector-base voltage VCBO 120 V
|
TY Semiconductor Co., Ltd
|
