| PART |
Description |
Maker |
| GBPC25005W GBPC25010W GBPC2508W GBPC2501W GBPC2502 |
HIGH CURRENT 15/25/35/AMPS. SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIERS
18-A, 5-V Input, Non-Isolated Wide-Adjust SIP Module 12-SIP MODULE -40 to 85
HIGH CURRENT SILICON BRIDGE RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 25 Amperes)
HIGH CURRENT SILICON BRIDGE RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 35 Amperes)
|
Surge Components
PanJit International Inc.
PANJIT[Pan Jit International Inc.]
|
| BC808-16 BC808-25 BC808-40 Q62702-C1689 BC807 BC80 |
From old datasheet system
SH2 Series, 7086 Group, Two ADC circuits, 6-ch 16-bit MTU2, 3-ch 16-bit MTU2S, Port Output Enable, 2-ch CMT, UBC, 5v IO, 15 mA IO TFP-100B; Vcc= 3.0 to 5.5 volts, Temp= -40 to 85 C; Package: PTQP0100KA-A
PNP Silicon AF Transistors (For general AF applications High collector current High current gain) 500 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR
PNP Silicon AF Transistors (For general AF applications High collector current High current gain) 500 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR
PNP Silicon AF Transistors (For general AF applications High collector current High current gain) 进步党硅晶体管自动对焦（自动对焦对于一般应用高集电极电流的高电流增益）
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
Fairchild Semiconductor, Corp.
|
| FS1UM-18A |
Standard Recovery Rectifier; Forward Current:15A; Forward Current Average:9.5A; Forward Current Avg Rectified, IF(AV):9.5A; Forward Surge Current Max, Ifsm:225A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes
HIGH-SPEED SWITCHING USE
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| FS1UM-16A |
Standard Recovery Rectifier; Forward Current:15A; Forward Current Average:9.5A; Forward Current Avg Rectified, IF(AV):9.5A; Forward Surge Current Max, Ifsm:225A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
|
Powerex Power Semiconductors
Mitsubishi Electric Corporation
|
| BCP49 Q62702-C2137 BCP29 Q62702-C2136 |
From old datasheet system
NPN Silicon Darlington Transistors (For general AF applications High collector current High current gain)
|
SIEMENS[Siemens Semiconductor Group]
|
| A0837 BC876 |
PNP Silicon Darlington Transistors (High current gain High collector current)
From old datasheet system
|
Siemens
Infineon
|
| 2SC5069 |
High current capacity. Adoption of MBIT process. High DC current gain.
|
TY Semiconductor Co., Ltd
|
| BCP69-16 |
High current. Three current gain selections. 1.4 W total power dissipation.
|
TY Semiconductor Co., Ltd
|
| BCP68 |
High current. Three current gain selections. 1.4 W total power dissipation.
|
TY Semiconductor Co., L...
|
| BC869 |
High current. Three current gain selections. 1.2 W total power dissipation.
|
TY Semiconductor Co., L...
|
