| PART |
Description |
Maker |
| 2N6667 2N6666 2N6668 |
PLASTIC MEDIUM-POWER SILICON TRANSISTORS
|
BOCA[Boca Semiconductor Corporation]
|
| 2N6387-D |
Plastic Medium-Power Silicon Transistors
|
ON Semiconductor
|
| BD166 |
Plastic Medium Power Silicon PNP Transistor
|
Motorola Inc
MOTOROLA[Motorola, Inc]
|
| MJE350 |
Plastic Medium Power PNP Silicon Transistor
|
New Jersey Semi-Conduct...
|
| BD680AG |
Plastic Medium-Power Silicon PNP Darlingtons
|
ON Semiconductor
|
| BD436T BD436G BD438G BD442 |
Plastic Medium Power Silicon PNP Transistor
|
Rectron Semiconductor
|
| MJE340-D |
Plastic Medium Power NPN Silicon Transistor
|
ON Semiconductor
|
| TIP100 TIP107 |
PLASTIC MEDIUM-POWER COPLEMENTARY SILICON TRANSISTORS
|
New Jersey Semi-Conductor P...
New Jersey Semi-Conduct...
|
| BD439 BD441 BD435 BD437 BD437G BD437T |
Plastic Medium Power Silicon NPN Transistor
|
ONSEMI[ON Semiconductor]
|
| TIP10011 |
NPN Plastic Medium-Power Silicon Transistors
|
Micro Commercial Components
|
| BDX53B-D |
Plastic Medium-Power Complementary Silicon Transistors
|
ON Semiconductor
|
| CSD882P CSD882R CSD882 CSD882E CSD882Q |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB772P
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSB772R
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB772Q
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSB772E
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSB772
Audio Frequency Power Amplifier and Low Speed Switching Applications
|
CDIL[Continental Device India Limited]
|
