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UT61L256JC-10 - Access time: 10 ns, 32 K x 8 Bit high speed low Vcc CMOS SRAM Access time: 12 ns, 32 K x 8 Bit high speed low Vcc CMOS SRAM Access time: 15 ns, 32 K x 8 Bit high speed low Vcc CMOS SRAM Access time: 8 ns, 32 K x 8 Bit high speed low Vcc CMOS SRAM

UT61L256JC-10_8151383.PDF Datasheet

 
Part No. UT61L256JC-10 UT61L256JC-12 UT61L256JC-15 UT61L256JC-8 UT61L256LS-10 UT61L256LS-12 UT61L256LS-15
Description Access time: 10 ns, 32 K x 8 Bit high speed low Vcc CMOS SRAM
Access time: 12 ns, 32 K x 8 Bit high speed low Vcc CMOS SRAM
Access time: 15 ns, 32 K x 8 Bit high speed low Vcc CMOS SRAM
Access time: 8 ns, 32 K x 8 Bit high speed low Vcc CMOS SRAM

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 Full text search : Access time: 10 ns, 32 K x 8 Bit high speed low Vcc CMOS SRAM Access time: 12 ns, 32 K x 8 Bit high speed low Vcc CMOS SRAM Access time: 15 ns, 32 K x 8 Bit high speed low Vcc CMOS SRAM Access time: 8 ns, 32 K x 8 Bit high speed low Vcc CMOS SRAM


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AMIC Technology
5962R-0323502QUA 5962R-0323501VUC 5962R-0323502QUC 512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish hot solder dipped. Total dose 100K rad(Si).
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish gold. Total dose 100K rad(Si).
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish gold. Total dose 100K rad(Si).
512K x 18 SRAM. 15ns access time. Lead finish hot gold.
512K x 18 SRAM. 15ns access time. Lead finish hot solder dipped.
512K x 18 SRAM. 15ns access time. Lead finish gold. Prototype flow.
512K x 18 SRAM. 15ns access time. Lead finish factory option.
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish factory option. Total dose 100K rad(Si).
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish hot solder dipped. Total dose 100K rad(Si).
Aeroflex Circuit Technology
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Flash - NOR IC; Memory Type:Flash; Access Time, Tacc:100ns; Page/Burst Read Access:25ns; Sector Type:Top Boot Block; Package/Case:56-TSOP; Memory
Flash - NOR IC; Memory Type:Flash; Access Time, Tacc:100ns; Page/Burst Read Access:25ns; Sector Type:Bottom Boot Block; Package/Case:56-TSOP; Memory
Flash - NOR IC; Memory Type:Flash; Access Time, Tacc:110ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:56-TSOP; Memory
Flash - NOR IC; Memory Type:Flash; Access Time, Tacc:110ns; Page/Burst Read Access:25ns; Sector Type:Top Boot Block; Package/Case:56-TSOP; Memory
Flash - NOR IC; Memory Type:FLASH; Access Time, Tacc:110ns; Page/Burst Read Access:25ns; Sector Type:Bottom Boot Block; Package/Case:56-TSOP; Memory
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Flash - NOR IC; Memory Type:Flash; Access Time, Tacc:90ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:56-TSOP; Memory
List of Unclassifed Man...
List of Unclassifed Manufacturers
N.A.
Unisonic Technologies
ETC[ETC]
Electronic Theatre Controls, Inc.
ULQ2801A ULQ2802A ULQ2803A ULQ2804A ULQ2805A Flash - NOR IC; Memory Type:Flash; Access Time, Tacc:100ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:56-TSOP; Memory Configuration:128K x 16; Memory Size:256MB; NOR Flash Type:Page Mode Access RoHS Compliant: Yes 八达林顿阵列
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5962-0323601QXA 5962-0323601QXC 5962-0323601QXX 59 128K x 32 SRAM: SMD. 15ns access time. Class Q. Lead finish hot solder dipped.
128K x 32 SRAM: SMD. 15ns access time. Class Q. Lead finish gold.
128K x 32 SRAM: SMD. 15ns access time. Class Q. Lead finish factory option.
128K x 32 SRAM: SMD. 15ns access time. Class V. Lead finish hot solder dipped.
128K x 32 SRAM: SMD. 15ns access time. Class V. Lead finish gold.
128K x 32 SRAM: SMD. 15ns access time. Class V. Lead finish factory option.
128K x 32 SRAM. 15ns access time. Lead finish hot solder dipped.
128K x 32 SRAM. 15ns access time. Lead finish factory option.
128K x 32 SRAM. 15ns access time. Lead finish gold.
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High Speed CMOS Logic Triple 3-Input NAND Gates 14-SOIC -55 to 125
Parallel-Load 8-Bit Shift Registers 16-VQFN -40 to 85
Parallel-Load 8-Bit Shift Registers 16-SO -40 to 85
High Speed CMOS Logic Quad 2-Input AND Gates 14-SOIC -55 to 125
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意法半导
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512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class T. Total dose none
512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class T. Total dose 1E4(10krad(Si)).
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