| PART |
Description |
Maker |
| 2SA1759 A5800340 2SC4620 2SC4505 2SA1759T100P |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
From old datasheet system
High-Voltage Switching Transistor (Camera strobes and Telephone, Power supply) (-400V, -0.1A)
High-Coltage Switching Transistor
|
ROHM
|
| 2N3792 2N3789 2N3790 2N3791 |
POWER TRANSISTORS(10A/150W)
POWER TRANSISTORS(10A150W)
POWER TRANSISTORS(10A,150W)
POWER TRANSISTORS: GENERAL PURPOSE AMPLIFIER AND LOW-FREQUENCY SWITCHING APPLICATION
|
MOSPEC[Mospec Semiconductor]
|
| FS30ASJ-06F FS30ASJ-06F-T13 |
Transistors>Switching/MOSFETs
High-Speed Switching Use Nch Power MOS FET
|
Renesas Electronics Corporation
|
| H5N3007CF |
Transistors>Switching/MOSFETs
Silicon N Channel MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| H7N0312ABNBSP H7N0312AB |
Transistors>Switching/MOSFETs
Silicon N Channel MOS FET High Speed Power Switching
|
RENESAS[Renesas Electronics Corporation]
Renesas Electronics Corporation.
|
| H5N2306PF H5N2306PF-E |
Transistors>Switching/MOSFETs
Silicon N Channel MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| H5N2515P-E H5N2515P |
Transistors>Switching/MOSFETs
Silicon N Channel MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| H7N0307AB |
Transistors>Switching/MOSFETs
Silicon N Channel MOS FET High Speed Power Switching
|
Renesas Electronics Corporation.
|
| H5N3011P-E H5N3011P |
Transistors>Switching/MOSFETs
Silicon N Channel MOS FET High Speed Power Switching 通道场效应晶体管高速电源开
|
RENESAS[Renesas Electronics Corporation]
Renesas Electronics Corporation.
Renesas Electronics, Corp.
|
| FX6ASJ-03-T13 FX6ASJ-03 |
Transistors>Switching/MOSFETs
High-Speed Switching Use Pch Power MOS FET 高速开关使用沟道功率MOS FET
|
RENESAS[Renesas Electronics Corporation]
Renesas Electronics Corporation.
|
