| PART |
Description |
Maker |
| TGA3504-SM TGA3504-SM-15 |
2 to 30 GHz GaAs Wideband Gain Block
|
TriQuint Semiconductor
|
| RMM2080 |
2-18 GHz Wideband Variable-Gain Driver Amplifier
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| VMMK-2503-TR1G VMMK-2503-BLKG |
1 to 12 GHz GaAs Wideband Amplifier in Wafer Level Package
|
AVAGO TECHNOLOGIES LIMITED
|
| SKY13298-360LF |
GaAs SP2T Switch for Ultra Wideband (UWB) 3 - 8 GHz
|
Skyworks Solutions Inc.
|
| CGY1041 |
1 GHz - 21 dB gain GaAs push-pull amplifier
|
NXP Semiconductors
|
| 636ST89E HMC636ST8911 HMC636ST89E |
GaAs pHEMT High Linearity Gain Block, 0.2 - 4.0 GHz
|
Hittite Microwave Corporation
Hittite Microwave Corpo...
|
| HMC636ST89 HMC636ST89E |
GaAs PHEMT HIGH LINEARITY Gain Block, 0.2 - 4.0 GHz
|
Hittite Microwave Corporation
|
| HMC313 |
GaAs InGaP HBT MMIC BROADBAND AMPLIFIER GAIN BLOCK, DC - 6.0 GHz
|
Hittite Microwave Corporation
|
| CGY1041 |
1 GHz, 21 dB gain GaAs push-pull amplifier CGY1041<SOT115J|<<<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| HMC742HFLP5E |
0.5 dB LSB GaAs MMIC 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, 0.5 - 4 GHz
|
Hittite Microwave Corporation
|
| EVAL-ADG936EB ADG936 ADG936BCP ADG936BCP-500RL7 AD |
Wideband 4 GHz, 36 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, Dual SPDT 宽带4千兆赫，36千兆赫的CMOS 1.65 V分贝.75 V的隔离，双路SPDT
Wideband 4 GHz, 36 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, Dual SPDT DUAL 1-CHANNEL, SGL POLE DOUBLE THROW SWITCH, QCC20
|
AD[Analog Devices]
Analog Devices, Inc.
ANALOG DEVICES INC
|
| HMC681LP5E |
0.5 dB LSB GaAs MMIC 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER w/ SERIAL CONTROL, DC - 1 GHz
|
Hittite Microwave Corporation
|
