| PART |
Description |
Maker |
| HAT2058R-EL-E HAT2058RJ-EL-E HAT2058R05 |
4 A, 100 V, 0.18 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET 3.95 X 4.90 MM, PLASTIC, FP-8DAV, SOP-8
Silicon N Channel Power MOS FET High Speed Power Switching
|
Analog Devices, Inc.
Renesas Electronics Corporation
|
| HAT2058R09 HAT2058R-EL-E |
4 A, 100 V, 0.18 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET 4.90 X 3.95 MM, PLASTIC, SOP-8
Silicon N Channel Power MOS FET High Speed Power Switching
|
Analog Devices, Inc.
Renesas Electronics Corporation
|
| BD809 BD810 BD809-D |
POWER TRANSISTORS PNP SILICON
Plastic High Power Silicon Transistor
Plastic High Power Silicon PNP Transistor
|
Motorola, Inc
ON Semiconductor
|
| MUR10150E/D MUR10150E-D |
SCANSWITCH Power Rectifier For Use As A Damper Diode In High and Very High Resolution Monitors
10 A, 1500 V, SILICON, RECTIFIER DIODE, TO-220AC PLASTIC, CASE 221B-04, 2 PIN
|
ON Semiconductor
|
| U74LVC2G86L-S08-T U74LVC2G86L-S08-R U74LVC2G86G-S0 |
This device has power-down protective circuit, preventing device destruction when it is powered down.
Glass passivated triacs in a full pack plastic envelope, intended for use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance.
|
Unisonic Technologies
|
| IPB80P03P4L-07 IPI80P03P4L-07 IPP80P03P4L-07 |
OptiMOS-P2 Power-Transistor
80 A, 30 V, 0.0069 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB GREEN, PLASTIC, TO-263, 3 PIN
80 A, 30 V, 0.0072 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-262AA GREEN, PLASTIC, TO-262, 3 PIN
80 A, 30 V, 0.0072 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB GREEN, PLASTIC, TO-220, 3 PIN
|
Infineon Technologies AG
|
| CSA940 CSC2073 |
CSA940 PNP PLASTIC POWER TRANSISTOR, CSC2073 NPN PLASTIC POWER TRANSISTOR
|
CDIL[Continental Device India Limited]
|
| IPB80P03P4L-04 IPI80P03P4L-04 IPP80P03P4L-04 |
80 A, 30 V, 0.007 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB GREEN, PLASTIC, TO-263, 3 PIN
80 A, 30 V, 0.007 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-262AA GREEN, PLASTIC, TO-262, 3 PIN
80 A, 30 V, 0.007 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB GREEN, PLASTIC, TO-220, 3 PIN
OptiMOS-P2 Power-Transistor
|
Infineon Technologies AG
|
| MAAP-000066-PKG003 |
2500 MHz - 5000 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER 5 X 5 MM, ROHS COMPLIANT, PLASTIC, QFN-20
|
Stackpole Electronics, Inc.
|
| MAAPGM0066-PKG003 |
2500 MHz - 5000 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER 5 X 5 MM, ROHS COMPLIANT, PLASTIC, QFN-20
|
JAE Electronics, Inc.
|
| CFB940 CFB940A CFB940AP CFB940AQ CFD1264AQ CFD1264 |
2.000W Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 60 - 240 hFE. Complementary CFD1264
2.000W Power PNP Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 60 - 240 hFE. Complementary CFD1264A
2.000W Power PNP Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFD1264AP
2.000W Power PNP Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFD1264AQ
2.000W Power NPN Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFB940AQ
2.000W Power NPN Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFB940Q
2.000W Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFD1264Q
2.000W Power NPN Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFB940P
2.000W Power NPN Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 60 - 240 hFE. Complementary CFB940A
2.000W Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFD1264P
2.000W Power NPN Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFB940AP
|
Continental Device India Limited
|
| CFB949AQ CFD1275AQ CFB949AP CFD1275AP CFD1275R CFB |
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFD1275AQ
2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFB949AQ
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFD1275AP
2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFB949AP
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 2500 hFE. Complementary CFB949R
2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFD1275
2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFD1275P
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFD1275AR
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFD1275A
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFB949
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFB949Q
|
Continental Device India Limited
|
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