PART |
Description |
Maker |
KU3600N10D |
N-ch Trench MOS FET
|
Korea Electronics (KEC)
|
KU024N06P |
N-ch Trench MOS FET
|
KEC(Korea Electronics)
|
KUS035N06F |
N-ch Trench MOS FET
|
KEC(Korea Electronics)
|
2SK2095N A5800286 |
Transistors > MOS FET > Power MOS FET Small switching (60V, 10A) From old datasheet system
|
ROHM[Rohm]
|
2SK2503 A5800293 |
Transistors > MOS FET > Power MOS FET Small switching (60V, 5A) From old datasheet system
|
ROHM[Rohm]
|
2SK2887 A5800304 |
Transistors > MOS FET > Power MOS FET Switching (200V, 3A) From old datasheet system
|
ROHM[Rohm]
|
EM6K1 |
Transistors > MOS FET > Small Signal MOS FET
|
ROHM
|
2SK2132 2SK2132-T |
High-voltage power MOS FET 180V/4A SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
|
NEC[NEC]
|
2SK2974 SK2974 |
RF POWER MOS FET(VHF/UHF power amplifiers) From old datasheet system MITSUBISHI RF POWER MOS FET
|
Mitsubishi Electric Semiconductor
|
2SK439 2SK439E K439 |
Silicon N Channel MOS FET Silicon N-Channel MOS FET 硅N沟道场效应晶体管 TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | SPAK 2SK439
|
Hitachi,Ltd. Sanyo Semicon Device Hitachi Semiconductor
|