| PART |
Description |
Maker |
| STGW60H65DF |
60 A, 650 V field stop trench gate IGBT with very fast diode
|
ST Microelectronics
STMicroelectronics
|
| STGW20H65FB |
Trench gate field-stop IGBT, HB series 650 V, 20 A high speed
|
ST Microelectronics
|
| STGW40H120F2 |
Trench gate field-stop IGBT, H series 1200 V, 40 A high speed
|
ST Microelectronics
|
| STGW60H65DFB |
Trench gate field-stop IGBT, HB series 650 V, 60 A high speed
|
ST Microelectronics
|
| STGWA15M120DF3 |
Trench gate field-stop IGBT, M series 1200 V, 15 A low loss
|
ST Microelectronics
|
| STGP10H60DF |
Trench gate field-stop IGBT, H series 600 V, 10 A high speed
|
ST Microelectronics
|
| STGB15M65DF2 |
Trench gate field-stop IGBT M series, 650 V, 15 A low loss
|
STMicroelectronics
|
| STGB30H60DF STGF30H60DF STGP30H60DF STGW30H60DF |
Low thermal resistance
600 V, 30 A high speed trench gate field-stop IGBT
|
STMicroelectronics
ST Microelectronics
|
| STGWT80V60F STGFW80V60F |
Low thermal resistance
Trench gate field-stop IGBT, V series 600 V, 80 A very high speed
|
STMicroelectronics
ST Microelectronics
|
| APTGT100DH60TG |
Asymmetrical - Bridge Trench Field Stop IGBT Power Module 150 A, 600 V, N-CHANNEL IGBT
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| APTGT100DU60TG |
Dual common source Trench Field Stop IGBT Power Module 150 A, 600 V, N-CHANNEL IGBT
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
