| PART |
Description |
Maker |
| JDP2S02AFS |
Diode Silicon Epitaxial Pin Type UHF~VHF Band RF Attenuator Applications
TOSHIBA Diode Silicon Epitaxial PIN Type
|
TOSHIBA[Toshiba Semiconductor]
|
| MC981 |
Diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V.
DIODE FOR HIGH SPEED SWICHING APPLICATION SILICON EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
| MMBTH10 MMBTSA1037 MMBTSA1162 MMBTSA1182 1SS390 MM |
NPN Silicon VHF/UHF Transistor
PNP Silicon Epitaxial Planar Transistor
SILICON EPITAXIAL PLANAR DIODE
NPN Silicon Epitaxial Planar Transistors
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
PNP SILICON EPITAXIAL POWER TRANSISTOR
BAND SWITCHING DIODE
SILICON EPITAXIAL PLANAR SWITCHING DIODE
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
|
SEMTECH ELECTRONICS LTD.
SEMTECH ELECTRONICS LTD...
|
| MA4X796 |
Silicon epitaxial planar type SILICON, VHF BAND, MIXER DIODE
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| MA30W-A MA30W-B MA30-A MA30 MA30-B |
Silicon epitaxial planer type variable resistor SILICON, STABISTOR DIODE
|
Panasonic, Corp.
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
|
| SSM5H01TU-14 |
Silicon N Channel MOS Type (U-MOSII)/Silicon Epitaxial Schottky Barrier Diode
|
Toshiba Semiconductor
|
| MA2C346 |
Silicon epitaxial planar type VHF BAND, 13 pF, 15 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-34
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| SSM5G09TU-14 |
Silicon P Channel MOS Type (U-MOS3)/Silicon Epitaxial Schottky Barrier Diode
|
Toshiba Semiconductor
|
| KDS120V |
SILICON EPITAXIAL TYPE DIODE
|
KEC(Korea Electronics)
|
| KDV175E |
SILICON EPITAXIAL PIN TYPE DIODE
|
KEC(Korea Electronics)
|
| CRZ10 CRZ11 CRZ12 CRZ13 CRZ15 CRZ16 CRZ18 CRZ20 CR |
Zener Diode Silicon Epitaxial Type
|
Toshiba Semiconductor
|
