| PART |
Description |
Maker |
| AD605AR-REEL AD605AR-REEL7 AD605BR-REEL AD605BR-RE |
6.5V; 1.2-1.4W; dual, low-noise, single-supply variable gain amplifier. For ultrasound and sonar time-gain control, high performance AGC systems
|
Analog Devices
|
| BGU7060 |
Analog high linearity low noise variable gain amplifier
|
NXP Semiconductors
|
| 5962-9457201MEA 5962-9457202MEA |
Dual , Low Noise, Wideband Variable Gain Amplifier, 0 dB To 40 dB Gain
Dual, Low Noise, Wideband Variable Gain Amplifier, -10 dB To 30 dB Gain
|
Analog Devices
|
| DAML6275 |
Variable Gain Low Noise Amplifier
|
DAICO INDUSTRIES INC
DAICO[DAICO Industries, Inc.]
|
| BGA428 |
BGA428 High Gain/ Low Noise Amplifier
BGA428 High Gain Low Noise Amplifier
Silicon MMICs - 19dB LNA, 1.4...2.5GHz, NF=1.4dB, 50Ohm, SOT363
|
INFINEON[Infineon Technologies AG]
|
| AD8335ACPZ AD8335 AD8335ACPZ-REEL AD8335ACPZ-REEL7 |
Quad Low Noise Low Cost Variable Gain Amplifier
|
Analog Devices
|
| BFP193 Q62702-F1282 BFP193Q62702-F1282 |
NPN Silicon RF Transistor (For low noise/ high-gain amplifiers up to 2GHz For linear broadband amplifiers)
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| AGB3309 AGB3309S24Q1 AGB3309_REV_1.0 |
50?/a> High Linearity Low Noise Internally Biased Wideband Gain Block
50 High Linearity Low Noise Internally Biased Wideband Gain Block
50蟹 High Linearity Low Noise Internally Biased Wideband Gain Block
50з High Linearity Low Noise Internally Biased Wideband Gain Block
From old datasheet system
|
ANADIGICS[ANADIGICS, Inc]
|
| NTE1195 |
Integrated Circuit Low Noise, High Gain Preamp 集成电路低噪声，高增益前置放大器
Integrated Circuit Low Noise / High Gain Preamp
|
NTE Electronics, Inc.
NTE[NTE Electronics]
|
