| PART |
Description |
Maker |
| RJK0651DPB RJK0651DPB-00-J5 RJK0651DPB-13 |
60V, 25A, 14m max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| RF1S25N06SM RFP25N06 FN1492 |
25A/ 60V/ 0.047 Ohm/ N-Channel Power MOSFETs
From old datasheet system
25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation]
|
| RFF70N06 FN4073 |
25A/ 60V/ 0.025 Ohm/ N-Channel Power MOSFET
25A, 60V, 0.025 Ohm, N-Channel Power MOSFET
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| RJK0655DPB RJK0655DPB-00-J5 RJK0655DPB-15 |
60V, 35A, 6.7m max. Silicon N Channel Power MOS FET Power Switching
60V, 35A, 6.7m?max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| RFP25N06 RF1S25N06 RF1S25N06SM |
25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs
25A/ 60V/ 0.047 Ohm/ N-Channel Power MOSFETs
|
FAIRCHILD[Fairchild Semiconductor]
|
| SSC1000-25-12 SSC800-25-24 |
Solid-State Panel Mount Relay; Output Device:IGBT; Output Voltage Max:1000VDC; Control Voltage Max:16VDC; Control Voltage Min:8VDC; Load Current Max:25A; Switching:DC Switch; Capacitance:50; Control Voltage (Nominal):12
Solid-State Panel Mount Relay; Output Device:IGBT; Output Voltage Max:800VDC; Control Voltage Max:28VDC; Control Voltage Min:20VDC; Load Current Max:25A; Switching:DC Switch; Capacitance:50; Control Voltage (Nominal):24
|
CRYDOM CORP
|
| RJK0652DPB RJK0652DPB-00-J5 RJK0652DPB-13 |
60V, 35A, 7.0m max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| SBT250-06J |
Schottky Barrier Diode (Twin Type ・ Cathode Common) 60V, 25A Rectifier
|
Sanyo Semicon Device
|
| 1N659 1N660 FDLL659 1N661 1N746 1N963 1N3600 FDLL6 |
Ultra fast low capacitance diode. Working inverse voltage 50 V.
High speed high conductance diode. Working inverse voltage 175 V.
General purpose low diode. Working inverse voltage 100V.
500 mW silicon linear diode. Max zener impedance 6.0 Ohm, max zener voltage 7.5 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 5.1 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 7.0 Ohm, max zener voltage 6.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 23.0 Ohm, max zener voltage 3.9 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 11.0 Ohm, max zener voltage 5.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 24.0 Ohm, max zener voltage 3.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 22.0 Ohm, max zener voltage 4.3 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 5.0 Ohm, max zener voltage 6.8 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 8.0 Ohm, max zener voltage 8.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 10.0 V (Iz 20mA).
General purpose low diode. Working inverse voltage 200V.
General Purpose Diodes
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
http://
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