| PART |
Description |
Maker |
| RJK0655DPB RJK0655DPB-00-J5 RJK0655DPB-15 |
60V, 35A, 6.7m max. Silicon N Channel Power MOS FET Power Switching
60V, 35A, 6.7m?max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| 2N7000 2N7002 2N7000G |
N-channel 60V - 1.8ohm - 0.35A - SOT23-3L / TO-92 STripFET Power MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
| BYY58-900 BYY57 BYY57-100 BYY57-1000 BYY57-1100 BY |
35A Silicon Power Rectifier Diode 35 A, 900 V, SILICON, RECTIFIER DIODE
35A Silicon Power Rectifier Diode 35A条硅功率整流二极
35A Silicon Power Rectifier Diode 35 A, 1400 V, SILICON, RECTIFIER DIODE
|
ZETEX[Zetex Semiconductors]
Zetex Semiconductor PLC
|
| MBR3580 MBR3535 MBR3530 MBR35100 MBR3520 MBR3540 M |
35 Amp Rectifier 20 to 100 Volts Schottky Barrier
35A, 60V ultra fast recovery rectifier
|
MCC[Micro Commercial Components]
|
| BYP58-800 BYP57 BYP57-100 BYP57-150 BYP57-200 BYP5 |
35 A, 200 V, SILICON, RECTIFIER DIODE PLASTIC, 2 PIN
35 A, 700 V, SILICON, RECTIFIER DIODE PLASTIC, 2 PIN
35 A, 150 V, SILICON, RECTIFIER DIODE PLASTIC, 2 PIN
35 A, 75 V, SILICON, RECTIFIER DIODE PLASTIC, 2 PIN
35A Silicon Power Rectifier Diode 35 A, 150 V, SILICON, RECTIFIER DIODE
35A Silicon Power Rectifier Diode 35 A, 75 V, SILICON, RECTIFIER DIODE
35A Silicon Power Rectifier Diode 35 A, 500 V, SILICON, RECTIFIER DIODE
|
Diodes, Inc.
ZETEX[Zetex Semiconductors]
Zetex Semiconductor PLC
|
| FAN1117AD285X FAN1117AT33X FAN1117AS285X |
FETs - Nch 60VFETs - Nch 150VFETs - Nch 150V2.85 V FIXED POSITIVE LDO REGULATOR, 1.2 V DROPOUT, PSSO2
|
FAIRCHILD SEMICONDUCTOR CORP
|
| 1N659 1N660 FDLL659 1N661 1N746 1N963 1N3600 FDLL6 |
Ultra fast low capacitance diode. Working inverse voltage 50 V.
High speed high conductance diode. Working inverse voltage 175 V.
General purpose low diode. Working inverse voltage 100V.
500 mW silicon linear diode. Max zener impedance 6.0 Ohm, max zener voltage 7.5 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 5.1 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 7.0 Ohm, max zener voltage 6.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 23.0 Ohm, max zener voltage 3.9 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 11.0 Ohm, max zener voltage 5.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 24.0 Ohm, max zener voltage 3.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 22.0 Ohm, max zener voltage 4.3 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 5.0 Ohm, max zener voltage 6.8 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 8.0 Ohm, max zener voltage 8.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 10.0 V (Iz 20mA).
General purpose low diode. Working inverse voltage 200V.
General Purpose Diodes
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
http://
|
| BP35-06G BP35-08G BP35-005G BP35-01G BP35-02G BP35 |
35A HIGH CURRENT SILICON BRIDGE RECTIFIERS
|
Frontier Electronics.
|
| BP35-005 BP35-01 BP35-02 BP35-04 BP35-06 BP35-08 |
35A HIGH CURRENT SILICON BRIDGE RECTIFIERS
|
Frontier Electronics.
|
| 40TPS08 40TPS08A 40TPS12A 40TPS12 |
Silicon Controlled Rectifier, 55 A, 1200 V, SCR, TO-247AC, TO-247AC, 3 PIN
1200V 35A Phase Control SCR in a TO-247AC package
800V 35A Phase Control SCR in a TO-247AC package
|
Vishay Semiconductors
International Rectifier
|
| 2SJ598 2SJ598-Z |
P-ch power MOSFET 60V RDS(on)MAX.=130m ohm TO-251 TO-252
|
NEC
|
