| PART |
Description |
Maker |
| CFB612 |
60.000W Medium Power PNP Plastic Leaded Transistor. 120V Vceo, 6.000A Ic, 1000 hFE.
TRANSISTOR | BJT | DARLINGTON | PNP | 120V V(BR)CEO | 6A I(C) | TO-220FP
|
Continental Device India Limited
|
| 2SA1425 2SA1425Y |
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 800MA I(C) | SC-71
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER, DRIVER STAGE AMPLIFIER APPLICATIONS
|
TOSHIBA
|
| 2SA1358Y 2SA1358 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 1A I(C) | TO-126VAR 晶体管|晶体管|进步党| 120伏特五（巴西）总裁| 1A条一（c）|26VAR
|
TOSHIBA
|
| FCX705_02 705 FCX705 FCX705TA FCX70502 |
120V PNP SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR
|
ZETEX[Zetex Semiconductors]
|
| 2SD1953 0771 |
NPN Epitaxial Planar Silicon Transistor 120V/1.5A Driver Applications
From old datasheet system
NPN Epitaxial Planar Silicon Transistors for 120V/1.5A Driver Applications(120V/1.5A驱动器应用的NPN硅外延平面型晶体
|
Sanyo Electric Co.,Ltd.
|
| AP1034 AP1038 AP1023 AP1145 AP1037 AP1022 AP1065 A |
TRANSISTOR | BJT | PNP | 275V V(BR)CEO | 10A I(C) | TO-3
TRANSISTOR | BJT | PNP | 250V V(BR)CEO | 10A I(C) | TO-3
TRANSISTOR | BJT | PNP | 300V V(BR)CEO | 10A I(C) | TO-3
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 10A I(C) | TO-210AC
TRANSISTOR | BJT | PNP | 250V V(BR)CEO | 10A I(C) | TO-66
TRANSISTOR | BJT | PNP | 300V V(BR)CEO | 10A I(C) | TO-210AC
TRANSISTOR | BJT | PNP | 170V V(BR)CEO | 10A I(C) | TO-5
TRANSISTOR | BJT | PNP | 150V V(BR)CEO | 10A I(C) | TO-33
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 10A I(C) | TO-3 晶体管|晶体管|进步党| 120伏特五（巴西）总裁| 10A条一（c）|
|
SCHURTER AG
|
| 2SA1696D 2SA1696C 2SC4473E |
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 400MA I(C) | SOT-186
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 400MA I(C) | SOT-186 晶体管|晶体管| npn型| 120伏特五（巴西）总裁| 400mA的一（c）|的SOT - 186
|
Mospec Semiconductor, Corp.
|
| 2SB1094 2SB1094L 2SB1094M |
Silicon transistor
PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIER
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | SOT-186
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
|
NEC Corp.
|
| 2SB631KF 2SB631KD 2SB631E 2SB631D 2SB631KE 2SB631F |
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 1A I(C) | TO-126
TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 1A I(C) | TO-126
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 1A I(C) | TO-126 晶体管|晶体管| npn型| 120伏特五（巴西）总裁| 1A条一（c）|26
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 1A I(C) | TO-126 晶体管|晶体管|叩| 100V的五（巴西）总裁| 1A条一（c）|26
|
Riedon, Inc.
Sanyo Electric Co., Ltd.
|
| OC70 OC75 OC66 2N217 OC74 OC65 OC73 OC76 OC77 OC78 |
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 50MA I(C) | TO-1
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 100MA I(C) | TO-1
TRANSISTOR | BJT | PNP | 10MA I(C) | TO-1
TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 150MA I(C) | TO-1
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 300MA I(C) | TO-1
TRANSISTOR | BJT | PNP | 16V V(BR)CEO | 300MA I(C) | TO-1
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 250MA I(C) | TO-1
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 200MA I(C) | TO-1
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 50MA I(C) | TO-1
TRANSISTOR | BJT | PNP | 10V V(BR)CEO | 50MA I(C) | TO-1
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 500MA I(C) | TO-5
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 1A I(C) | TO-5
TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 500MA I(C) | TO-5
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 1A I(C) | TO-5
68HC11/Bidirectional-Compatible µP Reset Circuit
TRANSISTOR | BJT | PNP | 18V V(BR)CEO | 500MA I(C) | TO-5 晶体管|晶体管|进步党| 18V的五（巴西）总裁| 500mA的一（c）|
|
APEM SA
|
| 2SA1494 |
Silicon PNP Epitaxial Planar Transistor(硅PNP外延平面晶体 17 A, 200 V, PNP, Si, POWER TRANSISTOR
Silicon PNP Epitaxial Planar Transistor(Audio and General Purpose)
|
Sanken Electric Co., Ltd.
SANKEN[Sanken electric]
|
