| PART |
Description |
Maker |
| INA-12063 INA-12063-TR1 INA-12063-BLK |
1500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
1.5 GHz的低噪声自偏置晶体管放大
1.5 GHz Low Noise Self-Biased Transistor Amplifier
|
http://
|
| 2SC4095 |
MICROWAVE LOW NOISE AMPLIFIER
|
California Eastern Labs
|
| HMC719LP4 HMC719LP4E |
GaAs PHEMT MMIC HIGH IP3 LOW NOISE AMPLIFIER, 1.3 - 2.9 GHz
1300 MHz - 2900 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
Hittite Microwave Corporation
Hittite Microwave Corpo...
|
| MAX2130 MAX2130EUA MAX213 MAX2130EUAT |
Broadband / Two-Output / Low-Noise Amplifier for TV Tuner Applications
Broadband, Two-Output, Low-Noise Amplifier for TV Tuner Applications 44 MHz - 878 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
|
MAXIM - Dallas Semiconductor
MAXIM[Maxim Integrated Products]
Maxim Integrated Products, Inc.
|
| 2SC3582 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
|
NEC
|
| TGA1307 TGA1307-EPU |
Ka Band Low Noise Amplifier 23000 MHz - 29000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
TriQuint Semiconductor, Inc.
|
| AGB3301 AGB3301S24Q1 |
50 ohm HGIH LINEARITY LOW NOISE WIDEBAND GAIN BLOCK 250 MHz - 3000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
Gain Block Amplifiers
The AGB is one of a series of GaAs MESFET amplifiers designed for use in applications requiring high linearity, low noise and low ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
Anadigics Inc
|
| UPA808 UPA808T UPA808T-T1 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD
|
NEC[NEC]
|
| UPA807 UPA807T UPA807T-T1 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD
|
NEC[NEC]
|
| 2SC3585 2SC3585-T1B 2SC3585R43 2SC3585R45 2SC3585R |
For amplify microwave and low noise.
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISOR
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits 晶体管|晶体管|叩| 10V的五（巴西）总裁| 35MA一（c）|的SOT - 346
TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 35MA I(C) | SOT-346 晶体管|晶体管|叩| 10V的五（巴西）总裁| 35MA一（c）|的SOT - 346
|
NEC[NEC]
NEC Corp.
NEC, Corp.
|
| AGB3300 AGB3300_REV_2.1 AGB3300S24Q1 |
50OHM HIGH LINEARITY LOW NOISE WIDEBAND GAIN BLOCK 250 MHz - 3000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
From old datasheet system
Gain Block Amplifiers
The AGB3300 is one of a series of GaAs MESFET amplifiers designed for use in applications requiring high linearity, low noise and ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
Anadigics Inc
|
