PART |
Description |
Maker |
3DD13003-TO-126 |
TRANSISTORNPN 晶体管(NPN)的 TRANSISTOR锛?NPN 锛?/span>
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江苏长电科技股份有限公司 Jiangsu Changjiang Electronics Technology Co., Ltd. 姹???跨?绉???′唤??????
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154-22 153-28 154-18 154-04 154-10 154-14 154-12 1 |
TRANSISTOR | BJT | NPN | 220V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 260V V(BR)CEO | 7.5A I(C) TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 7.5A I(C) TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 7.5A I(C) TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 40V的五(巴西)总裁| 7.5AI(丙)|个STR - 1 / 4 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 60V的五(巴西)总裁| 7.5AI(丙)|个STR - 1 / 4 TRANSISTOR | BJT | NPN | 280V V(BR)CEO | 7.5A I(C) 晶体管|晶体管| npn型| 280伏特五(巴西)总裁| 7.5AI(丙
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BCM847DS BCM847BS BCM847BV BCM847BV115 |
NPN/NPN matched double transistors; Package: SOT666 (SS-Mini); Container: Tape reel smd 100 mA, 45 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR NPN/NPN matched double transistors
|
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2SD389A 2SD389AQ 2SD389P 2SD601 2SD601AR 2SD601AS |
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|
Panasonic, Corp. Panasonic Corporation PANASONIC[Panasonic Semiconductor]
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PBSS4350SS115 |
50 V, 2.7 A NPN/NPN low VCEsat (BISS) transistor; Package: SOT96-1 (SO8); Container: Tape reel smd 2700 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
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FTM3725 |
NPN General Purpose Amplifier NPN Transistor 1200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, MS-012AC
|
FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor, Corp.
|
BFG67_XR BFG67 BFG67_X BFG67X BFG67XR BFG67/XR BFG |
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|
PHILIPS[Philips Semiconductors] NXP Semiconductors N.V.
|
BFG520W BFG520W_X BFG520W/X |
NPN 9GHz wideband transistor(NPN 9G赫兹 宽带晶体 NPN 9 GHz wideband transistors
|
PHILIPS[Philips Semiconductors] NXP Semiconductors
|
BDY96 |
TRANSISTOR | BJT | NPN | 350V V(BR)CEO | 10A I(C) | TO-3 Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=350 / Ic=10 / Hfe=15-60 / fT(Hz)=10M / Pwr(W)=40
|
Semelab
|
FCX688B FCX688BTA |
TRANSISTOR NPN 12V 3000MA SOT-89 3000 mA, 12 V, NPN, Si, SMALL SIGNAL TRANSISTOR NPN SILICON POWER (SWITCHING) TRANSISTOR
|
Zetex Semiconductor PLC Zetex Semiconductors
|
PEMH9 PIMH9 PUMH9 PUMH9125 |
NPN-NPN resistor-equipped transistors; R1 = 10 kOhm, R2 = 47 kOhm NPN-NPN配电阻型晶体管,R1=10千欧姆,R2=47千欧 NPN/NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ NPN/NPN resistor-equipped transistors; R1 = 10 k楼?, R2 = 47 k楼?
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NXP Semiconductors N.V.
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