| PART |
Description |
Maker |
| NE3512S02-T1D-A NE3512S02 NE3512S02-T1D NE3512S02- |
HETERO JUNCTION FIELD EFFECT TRANSISTOR
|
CEL[California Eastern Labs]
|
| NE3512S02 NE3512S02-T1C-A NE3512S02-T1D-A |
HETERO JUNCTION FIELD EFFECT TRANSISTOR 异质结型场效应晶体管
|
California Eastern Laboratories, Inc.
|
| CGD942C |
Hybrid amplifier module operating at a supply voltage of 24 V (DC), employing Hetero Field-Effect Transistor (HFET) GaAs dies. CGD942C<SOT115J|<<<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| 2SK3230C |
JUNCTION FIELD EFFECT TRANSISTOR
|
NEC[NEC]
|
| SMPJ231 SMPJ230 |
N-Channel silicon junction field-effect transistor
|
InterFET Corporation
|
| J111 J112 J113 |
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTORS
|
Micro Electronics
|
| SMP5398 SMP5397 |
N-Channel silicon junction field-effect transistor
|
InterFET Corporation
|
| SMPJ212 |
N-Channel silicon junction field-effect transistor
|
InterFET Corporation
|
| SMPJ110A |
N-Channel silicon junction field-effect transistor
|
InterFET Corporation
|
