| PART |
Description |
Maker |
| RJK03N1DPA |
30V, 45A, 3.0m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| STP45NF3LL_06 B11NM60FD P11NM60FD STB11NM60FD STB1 |
N-channel 30V - 0.014ohm - 45A TO-220 - TO-220FP - D2PAK STripFET II power MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
| STD45NF03L 6770 |
From old datasheet system
N - CHANNEL 30V - 0.011 ohm - 45A DPAK STripFET POWER MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
| FDP20AN06A0 FDB20AN06A0 FDB20AN06A0NL FDP20AN06A0N |
60V N-Channel PowerTrench MOSFET 60V, 45A 20mohm 45 A, 60 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
N-Channel PowerTrench MOSFET 60V, 45A, 20m
N-Channel PowerTrench MOSFET 60V, 45A, 20 milliohm
N-Channel PowerTrench?? MOSFET 60V, 45A, 20m???
From old datasheet system
N-Channel PowerTrench㈢ MOSFET 60V, 45A, 20mз
N-Channel PowerTrench? MOSFET 60V, 45A, 20m?/a>
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
http://
|
| 30SLJQ045 30SLJQ045-15 |
SCHOTTKY RECTIFIER
30V 45A Hi-Rel Schottky Discrete Diode in a SMD-0.5 package
|
International Rectifier
|
| X9119TV14 X9119TV14-2.7 X9119TV14I X9119TV14I-2.7 |
IGBT MODULE, 1200V, 54A; Transistor type:IGBT4; Current, Ic continuous a max:56A; Voltage, Vce sat max:2.05V; Case style:MiniSkiiP 2 ; Current, Ic continuous b max:45A; Time, rise:35ns; Voltage, Vce sat typ:1.85V; Voltage, RoHS Compliant: Yes
Single Supply/Low Power/1024-Tap/2-Wire Bus
|
INTERSIL[Intersil Corporation]
|
| IRF7458 IRF7458TR |
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
Power MOSFET(Vdss=30V, Rds(on)max=8.0mohm, Id=14A)
Power MOSFET(Vdss=30V/ Rds(on)max=8.0mohm/ Id=14A)
|
IRF[International Rectifier]
|
| FMC6G30US60 |
Function Generator; Bandwidth Max:120MHz; Amplitude Accuracy :0.01dB; Frequency Max:120MHz; Frequency Min:0.1Hz; Waveforms:27 Built-in RoHS Compliant: NA
Compact & Complex Module
|
Fairchild Semiconductor Corporation
|
| IRF3708 IRF3708L IRF3708S |
Power MOSFET(Vdss=30V, Rds(on)max=12mohm, Id=62A) 功率MOSFET（减振钢板基本\u003d 30V的，的Rdson）最大值\u003d 12mohm，身份证\u003d 62A条）
Power MOSFET(Vdss=30V/ Rds(on)max=12mohm/ Id=62A)
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| DTD723YE09 DTD723YM |
200mA / 30V Low VCE (sat) Digital transistors (with built-in resistors)
|
Rohm
|
| DTB723YE DTB723YE09 DTB723YM |
-200mA / -30V Low VCE (sat) Digital transistors (with built-in resistors)
|
Rohm
|
