| PART |
Description |
Maker |
| 2SC4413 |
Adoption of FBET process. Low collector-to-emitter saturation voltage.
|
TY Semiconductor Co., Ltd
|
| 2SC3645 |
High-Voltage Switching Applications
Adoption of FBET Process High Breakdown Voltage (VCEO = 160V)
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| 2SC4003 |
High breakdown voltage Adoption of MBIT process Excellent hFE linearity
|
TY Semiconductor Co., Ltd
|
| VTB5041B VTB5040B |
VTB Process Photodiodes 俄罗斯外贸银行的过程光电二极
VTB Process Photo Diodes
|
List of Unclassifed Manufacturers
Electronic Theatre Controls, Inc.
ETC[ETC]
Perkin Elmer Optoelectronics
|
| VTB5041 VTB5040 |
VTB Process Photodiodes 俄罗斯外贸银行的过程光电二极
VTB Process Photo Diodes
|
List of Unclassifed Manufacturers
Electronic Theatre Controls, Inc.
ETC[ETC]
Perkin Elmer Optoelectronics
|
| RN4607 |
Transistor PNP Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
|
TOSHIBA[Toshiba Semiconductor]
|
| TVEZ-2-0-0-000-0-000000-00 TVEZ-6-6-0-000-0-000000 |
PROCESS RECORDER 6 INPUT
PROCESS RECORDER 2 INPUT 2输入过程记录
PROCESS RECORDER 4 INPUT 4输入过程记录
|
PRECI-DIP SA
|
| IRF3205LTRR IRF3205S IRF3205STRR |
75 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
Advanced Process Technology
Advanced Process Technology
|
International Rectifier
|
| IRF7101PBF IRF7101TRPBF IRF7101PBF-15 |
ADVANCED PROCESS TECHNOLOGY
HEXFET? Power MOSFET
HEXFET㈢ Power MOSFET
Adavanced Process Technology
|
IRF[International Rectifier]
|
| HN1B04FU HN1B04FUGR |
TRANSISTOR | BJT | PAIR | COMPLEMENTARY | 50V V(BR)CEO | 150MA I(C) | TSOP
Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications
|
TOSHIBA
|
