| PART |
Description |
Maker |
| 2SC4413 |
Adoption of FBET process. Low collector-to-emitter saturation voltage.
|
TY Semiconductor Co., Ltd
|
| 2SA1813 |
Very small-sized package. Adoption of FBET process. High DC current gain (hFE=500 to 1200).
|
TY Semiconductor Co., Ltd
|
| 2SA1593S-TL-E 2SA1593T-E 2SA1593T-TL-E 2SA1593S-E |
Bipolar Transistor Adoption of FBET, MBIT processes
|
ON Semiconductor
|
| VPA07 VPA18 VPA05 VPM06 VPM07 VPM05 VPH06 VPA25 VP |
FBET Hybrid IC Video Pack (VPH Series) Video Output Amplifiers For High-Definition TV
Hybrid intergrated circuits/with FBET/LSBT process chips/Wide bandwidth video output ICs
|
SANYO[Sanyo Semicon Device]
|
| 2SC4548 |
High Breakdown Voltage Adoption of MBIT Process Excellent hFE Linearlity.
|
TY Semiconductor Co., Ltd
|
| VTB5041B VTB5040B |
VTB Process Photodiodes 俄罗斯外贸银行的过程光电二极
VTB Process Photo Diodes
|
List of Unclassifed Manufacturers
Electronic Theatre Controls, Inc.
ETC[ETC]
Perkin Elmer Optoelectronics
|
| RN4608 |
Transistor PNP Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
|
Toshiba Semiconductor
|
| IRF3205LTRR IRF3205S IRF3205STRR |
75 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
Advanced Process Technology
Advanced Process Technology
|
International Rectifier
|
| 3B32-CUSTOM 3B32 3B32-00 3B32-01 3B32-02 3B32-15 |
Isolated, Process Current Input
Isolated/ Process Current Input
60V 1A SCHOTTKY RECTIFIER SMB
|
AD[Analog Devices]
Analog Devices, Inc.
|
| RN4905 |
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
|
TOSHIBA[Toshiba Semiconductor]
|
