| PART |
Description |
Maker |
| SZ5-M0 SZ5-M0-W0-00 SZ5-M0-WN-C9 SZ5-M0-WW-C8 SZ5- |
Superior high Flux for High Current System
Super high Flux output and high
|
Seoul Semiconductor
|
| KSE5020 KSE5020AS KSE5020S |
High Voltage, High Quality High Speed Switching : tF=0.1μs
Feature
NPN Silicon Transistor
|
FAIRCHILD[Fairchild Semiconductor]
|
| 2SC4738 |
High voltage and high current:VCE=50V,IC=150mA(Max.) High hFE: =120 to 700
|
TY Semiconductor Co., L...
|
| SB3H100-E3_54 SB3H100-E3_73 SB3H90 SB3H9008 SB3H10 |
High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance
|
Vishay Siliconix
|
| SB1H100-E3_54 SB1H100-E3_73 SB1H100 SB1H100HE3_54 |
High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance
|
Vishay Siliconix
|
| FJP5021NBSP FJP5021 FJP5021Y FJP5021RTU FJP5021RVT |
NPN Silicon Transistor
High Voltage and High Reliability
From old datasheet system
High Speed Switching : tF = 0.1μs (Typ.)
|
FAIRCHILD[Fairchild Semiconductor]
|
| AUIRS2112S |
The AUIRS2112S is a high voltage, high speed power MOSFET and IGBT driver with independent high- and lowside referenced output channels.
|
International Rectifier
|
| 2N6496 2N5039 2N5038 |
HIGH-CURRENT, HIGH-POWER HIGH-SPEED SILICON N-P-N PLANAR TRANSISTORS
|
GESS[GE Solid State]
|
| CXOMHT |
High Temperature/High Stability/Fast Start-up/High Shock
|
STATEK CORPORATION
|
| FD1500AV-90 |
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE
600 A AC/DC CLAMP-ON DMM,TRMS RoHS Compliant: NA
HIGH POWER/ HIGH FREQUENCY/ PRESS PACK TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| BUX41N |
HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR
|
New Jersey Semi-Conduct...
|
| BUX40 |
HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR
|
Comset Semiconductor
|
