| PART |
Description |
Maker |
| DN8796MS |
3 V operation Hall IC, Alternating magnetic field operation
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Panasonic
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| A3187ELT A3187EUA A3187LLT A3187LT UGN3175SUA A318 |
HALL-EFFECT LATCHES FOR HIGH-TEMPERATURE OPERATION 霍尔效应锁存器的高温作业
SENSOR IC 5CH 5V 5MA SGL 28-SSOP
Hall-Effect Latch For High-Temperature Operation(工作于高温的霍尔效应锁存
Hall-effect latche for high-temperature operation
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Allegro MicroSystems, Inc.
ALLEGRO[Allegro MicroSystems]
|
| LV3403M |
3V Operation Filter for FM Multiplex Broadcasting Reception(用于FM多路广播接收3V运算滤波 3V操作过滤器（用于调频多路广播接收3V的运算滤波器的调频广播接收多路）
3V Operation Filter for FM Multiplex Broadcasting Reception(用于FM多路广播接收V运算滤波
3 V Operation Filter for FM Multiplex Broadcasting Reception
Bi-CMOS LSI
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Sanyo Electric Co., Ltd.
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| A3121UA A3121LUA A3121EU A3123LUA 3122 3121 A3123U |
HALL-EFFECT SWITCHES FOR HIGH-TEMPERATURE OPERATION
Hall Effect switch For High-Temperature Operation(工作于高温的霍尔效应开
HALL-EFFECT SWITCHES FOR HIGH-TEMPERATURE OPERATION 霍尔效应开关高温作
Audio CODEC IC; IC Function:Audio Codec; Package/Case:28-SSOP; Interface Type:Serial; Leaded Process Compatible:No; No. of Bits:24; Peak Reflow Compatible (260 C):No; Mounting Type:Surface Mount RoHS Compliant: No 霍尔效应开关高温作
KPT 18C 18#20 PIN PLUG 霍尔效应开关高温作
|
ALLEGRO[Allegro MicroSystems]
Allegro MicroSystems, Inc.
|
| 1N3305 1N3307B 1N3312B 1N3323B 1N3314B 1N3310B 1N3 |
Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode 22 V, 50 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-203AB
Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode 140 V, 50 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-203AB
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) 10 V, 50 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-203AB
Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode 250 的低电流运算，低反向泄露，低噪声稳压二极
Zener Voltage Regulator Diode 齐纳稳压二极
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) 9.1 V, 50 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-203AB
Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode 160 V, 50 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-203AB
SILICON 50 WATT ZENER DIODES
Low Current Operation at 250?录A茂录?Low Reverse Leakage,Low Noise Zener Diode(250?录A氓路楼盲陆?莽?碌忙碌?茫??氓掳?氓??氓??忙录?莽?碌忙碌?茫??盲陆?氓?陋氓拢掳茫??茅陆?莽潞鲁盲潞?忙??莽庐隆)
Low Current Operation at 250 锛?ow Reverse Leakage,Low Noise Zener Diode
|
TE Connectivity, Ltd.
Hammond Manufacturing Co., Ltd.
STMicroelectronics N.V.
B＆K Precision, Corp.
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
MICROSEMI CORP-SCOTTSDALE
|
| MN101C35D MN101C35 |
Microcomputer - 8bit - General Purpose
The lower limit for operation guarantee for EPROM built-in type is 2.7 V
From old datasheet system
Lower limit for operation guarantee for EPROM built-in is 2.7V
|
Panasonic Semiconductor
Matsushita Electric
Panasonic Corporation
|
| 135D128X0006K2 135D128X0006T2 135D188X0006K2 135D2 |
Tantalum-Case with Glass-to-Tantalum Hermetic Seal For-55C to 200C Operation
Tantalum-Case with Glass-to-Tantalum Hermetic Seal For-55∑C to 200∑C Operation 钽案例与玻璃对钽密封密封的，55ΣC00ΣC行动
Tantalum-Case with Glass-to-Tantalum Hermetic Seal For-55∑C to 200∑C Operation 钽案例与玻璃对钽密封密封的，55ΣC200ΣC行动
Tantalum-Case with Glass-to-Tantalum Hermetic Seal For-55?? to 200?? Operation
|
Vishay Intertechnology,Inc.
Vishay Intertechnology, Inc.
|
| 285D07 285D126X0250F2 285D126X9250C0 285D126X9250C |
Tantalum-Cased-Tantalum Sintered Anode TANTALEX㈢ Capacitors for Operation to 125 ∑C
Tantalum-Cased-Tantalum Sintered Anode TANTALEX? Capacitors for Operation to 125 °C
Tantalum-Cased-Tantalum Sintered Anode TANTALEX庐 Capacitors for Operation to 125 掳C
Tantalum-Cased-Tantalum Sintered Anode TANTALEX垄莽 Capacitors for Operation to 125 隆?C
|
Vishay Siliconix
|
| DDZ21 DDZ23 DDZ24C DDZ27D DDZ6V2B DDZ6V8C DDZ5V6B |
3.6 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
Zener Diodes
SURFACE MOUNT PRECISION ZENER DIODE
LED 7-SEG .56 RED 632NM CC
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode 250 的低电流运算，低反向泄露，低噪声稳压二极
Low Current Operation at 250 锛?ow Reverse Leakage,Low Noise Zener Diode
|
DIODES[Diodes Incorporated]
Diodes Inc.
Diodes, Inc.
|
| MBM29DL321BD-80 MBM29DL322BD-80 MBM29DL323BD-80 MB |
OFFICE 802.3 TRANS CBL 1M 4M X 8 FLASH 3V PROM, 80 ns, PBGA57
TVS BIDIRECT 600W 33V SMB 32M的（4米8/2M × 16）位双操
32M (4M X 8/2M X 16) BIT Dual Operation 4M X 8 FLASH 3V PROM, 80 ns, PBGA57
32M (4M X 8/2M X 16) BIT Dual Operation 4M X 8 FLASH 3V PROM, 80 ns, PDSO48
|
FUJITSU LTD
Fujitsu, Ltd.
Fujitsu Limited
Fujitsu Component Limited.
|
| S4810 S6289 |
Low-voltage operation photo IC Operation at low voltage from 2.2 V
|
Hamamatsu Corporation
|
| AM29DL400BT-120FC AM29DL400BT-80FCB AM29DL400BT-90 |
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 256K X 16 FLASH 3V PROM, 120 ns, PDSO48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 256K X 16 FLASH 3V PROM, 80 ns, PDSO44
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 256K X 16 FLASH 3V PROM, 120 ns, PDSO44
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 4兆位12亩x 8-Bit/256亩x 16位）.0伏的CMOS只，同时作业快闪记忆
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 256K X 16 FLASH 3V PROM, 70 ns, PDSO44
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 512K X 8 FLASH 3V PROM, 70 ns, PDSO44
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 256K X 16 FLASH 3V PROM, 80 ns, PDSO48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 256K X 16 FLASH 3V PROM, 70 ns, PDSO48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 512K X 8 FLASH 3V PROM, 120 ns, PDSO48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 512K X 8 FLASH 3V PROM, 70 ns, PDSO48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 512K X 8 FLASH 3V PROM, 80 ns, PDSO48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 512K X 8 FLASH 3V PROM, 90 ns, PDSO44
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 256K X 16 FLASH 3V PROM, 90 ns, PDSO44
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 256K X 16 FLASH 3V PROM, 90 ns, PDSO48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 512K X 8 FLASH 3V PROM, 90 ns, PDSO48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 512K X 8 FLASH 3V PROM, 120 ns, PDSO44
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http://
ADVANCED MICRO DEVICES INC
Advanced Micro Devices, Inc.
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