| PART |
Description |
Maker |
| 2SA542 |
Low frequency amplifier. Collector-base voltage: Vcbo = -30V. Collector-emitter voltage: Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 250mW.
|
USHA India LTD
|
| 2SD5041 |
Transistor. AF output amplifier for electronic flash unit. Collector-base voltage Vcbo = 40V. Collector-emitter voltage Vceo = 20V. Emitter-base voltage Vebo = 7V. Collector dissipation Pc(max) = 0.75W. Collector current Ic = 5A.
Transistors
|
Usha India Ltd.
|
| 2SB468 |
GERMANIUM PNP DIFFUSED BASE ALLOYED EMITTER
|
List of Unclassifed Manufacturers
|
| MJE803 MJE801 MJE802 MJE800 |
Monolithic Construction With Built-in Base- Emitter Resistors
|
FAIRCHILD[Fairchild Semiconductor]
|
| MJE702 MJE700 MJE701 MJE703 |
Monolithic Construction With Built-in Base- Emitter Resistors
|
FAIRCHILD[Fairchild Semiconductor]
|
| 2SB852 |
Darlington connection for high DC current gain. between base and emitter.
|
TY Semiconductor Co., Ltd
|
| TIP117 TIP115 TIP116 |
Monolithic Construction With Built In Base- Emitter Shunt Resistors
|
FAIRCHILD[Fairchild Semiconductor]
|
| TIP142F TIP141F TIP140F |
Monolithic Construction With Built In Base- Emitter Shunt Resistors
|
Power Innovations Limited
FAIRCHILD[Fairchild Semiconductor]
|
| TIP147T TIP146T |
Monolithic Construction With Built In Base-Emitter Shunt Resistors
Monolithic Construction With Built In Base-Emitter Shunt Resistors
|
SemiHow Co.,Ltd.
TAI-SAW TECHNOLOGY CO.,...
|
| MJ10023-D |
SWITCHMODE Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode
|
ON Semiconductor
|
| TIP147T TIP145T TIP146T TIP147TTU |
PNP Epitaxial Silicon Darlington Transistor
Monolithic Construction With Built In Base-Emitter Shunt Resistors
|
FAIRCHILD[Fairchild Semiconductor]
|
| TIP117F |
EPITAXIAL PLANAR PNP TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)
|
KEC[KEC(Korea Electronics)]
|
