| PART |
Description |
Maker |
| W972GG8JB |
32M ?8 BANKS ?8 BIT DDR2 SDRAM
|
Winbond
|
| MT48LC4M16A2B4-6AITJ MT48LC4M16A2B4-75 MT48LC4M16A |
SDR SDRAM MT48LC16M4A2 ?4 Meg x 4 x 4 Banks MT48LC8M8A2 ?2 Meg x 8 x 4 Banks MT48LC4M16A2 ?1 Meg x 16 x 4 Banks
|
Micron Technology
|
| W9725G6JB |
4M ?4 BANKS ?16 BIT DDR2 SDRAM
|
Winbond
|
| W9751G8JB |
16M X 4 BANKS X 8 BIT DDR2 SDRAM
|
Winbond
|
| W3H32M72E-667ES W3H32M72E-667ESM W3H32M72E-667ESI |
32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package 32M × 72配置DDR2 SDRAM08 PBGA封装多芯片封
|
Atmel, Corp.
Honeywell International, Inc.
|
| 97SD3248RPQK |
1.5Gb SDRAM 8-Meg X 48-Bit X 4-Banks 32M X 48 SYNCHRONOUS DRAM, 6 ns, PQFP132
|
Maxwell Technologies, Inc
|
| KVR400D2N3K2512 KVR400D2N3K2 KVR400D2N3K2_512 KVR4 |
MEMORY MODULE SPECIFICATION 512MB (256MB 32M x 64-BIT x 2 PCS.) DDR2-400 CL3 240-PIN DIMM KIT
|
List of Unclassifed Manufacturers
ETC
|
| W972GG6JB W972GG6JB-25 |
16M ?8 BANKS ?16 BIT DDR2 SDRAM
Double Data Rate architecture: two data transfers per clock cycle
|
Winbond
|
| K4M511633C-RBF1H K4M511633C-RBF75 K4M511633C-RBL K |
32M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54
32M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54
8M X 16BIT X 4 BANKS MOBILE SDRAM IN 54FBGA
|
Samsung semiconductor
|
| K4S51153PF-YF K4S51153PF K4S51153PF-YPF1L K4S51153 |
32M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 FBGA-54
8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 8米16 × 4银行4FBGA移动SDRAM
32M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 FBGA-54
From old datasheet system
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K4S51163PF-YF K4S51163PF-F1L K4S51163PF-F90 K4S511 |
32M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 FBGA-54
8M x 16Bit x 4 Banks Mobile-SDRAM 8米16 × 4银行移动SDRAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
