| PART |
Description |
Maker |
| K4T51163QB K4T51163QB-GCCC K4T51163QB-GCD5 K4T5116 |
512Mb B-die DDR2 SDRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K4T51163QC-ZCE6 K4T51163QC-ZCLD5 K4T51163QC-ZLE7 K |
512Mb C-die DDR2 SDRAM 荤的512Mb芯片DDR2内存
|
http://
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| EBE52UC8AAFV EBE52UC8AAFV-AE-E EBE52UC8AAFV-BE-E E |
512MB Unbuffered DDR2 SDRAM HYPER DIMM垄芒
512MB Unbuffered DDR2 SDRAM HYPER DIMM?/a>
128M X 64 DDR DRAM MODULE, 0.45 ns, DMA240
|
ELPIDA MEMORY INC
|
| EBE52UD6ABSA EBE52UD6ABSA-5C-E EBE52UD6ABSA-4A-E |
512MB DDR2 SDRAM SO-DIMM (64M words x 64 bits, 2 Ranks) 512MB的DDR2 SDRAM内存的SO - DIMM400字64位，2个等级）
512MB DDR2 SDRAM SO-DIMM (64M words x 64 bits, 2 Ranks) 64M X 64 DDR DRAM MODULE, 0.6 ns, DMA240
|
Elpida Memory, Inc.
|
| HY5PS121621FP HY5PS121621FP-X HY5PS12421FP-X HY5PS |
512Mb DDR2 SDRAM
|
Hynix Semiconductor Inc.
|
| HY5PS12821F |
(HY5PS12xx21F) 512Mb DDR2 SDRAM
|
Hynix Semiconductor
|
| EBE51AD8AJFA EBE51AD8AJFA-6E-E |
512MB Registered DDR2 SDRAM DIMM
|
Elpida Memory
|
| EBE51RD8AEFA-6E-E EBE51RD8AEFA-6 |
512MB Registered DDR2 SDRAM DIMM
|
Elpida Memory
|
| WV3HG64M64EEU403D4IMG WV3HG64M64EEU403D4ISG WV3HG6 |
512MB - 64Mx64 DDR2 SDRAM UNBUFFERED, SO-DIMM
|
White Electronic Design...
|
| NT5TU32M16EG-BE NT5TU32M16EE-ACNA NT5TU32M16EE-ACT |
Commercial, Industrial and Automotive DDR2 512Mb SDRAM
|
Nanya Technology Corpor...
|
