| PART |
Description |
Maker |
| JS28F256P33BF JS28F256P33BFE |
NumonyxTM StrataFlash Embedded Memory
|
Micron Technology
|
| JS28F256P30B95 PC28F256P30B85 PC28F256P30T85 TE28F |
Numonyx StrataFlash Embedded Memory
|
Numonyx B.V
|
| TE28F640P30B85 TE28F640P30T85 TE28F128P30XXX RC28F |
Intel StrataFlash Embedded Memory
|
INTEL[Intel Corporation]
|
| GE28F256L18B85 GE28F256L18T85 GE28F128L18T85 PH28F |
1.8V, 85ns, 256Mbit StrataFlash Wireless Memory
1.8V, 85ns, 128Mbit StrataFlash Wireless Memory
1.8V, 85ns, 128Mbit lead-free StrataFlash Wireless Memory
|
Intel
|
| GE28F256L18T85 GE28F640L18T85 GE28F128L18T85 NZ48F |
StrataFlash Wireless Memory
|
Intel Corp.
Intel Corporation
|
| 28F640J3A |
(28FxxxJ3A) Intel StrataFlash Memory
|
Intel Corporation
|
| PF48F4400M0Y0T0 |
Numonyx StrataFlash Wireless Memory
|
Numonyx B.V
|
| E28F320J5-100 DA28F320J5-100 |
Intel StrataFlash memory 32 Mbit. Access speed 100 ns
|
Intel
|
| AM28F010A AM28F010A-120EC AM28F010A-120ECB AM28F01 |
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory with Embedded Algorithms
0.5MM, ZIF, SMT, 42 POSITION, EMBOSS TAPE T&R RoHS Compliant: Yes
CAP 100PF 1500V 20% NP0(C0G) SMD-1808 TR-13 PLATED-NI/SN
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位）CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位28亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 200 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 120 ns, PDSO32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 90 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 150 ns, PDSO32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PDSO32
|
Advanced Micro Devices, Inc.
SPANSION LLC
ADVANCED MICRO DEVICES INC
|
| RD48F3000L0ZTQ0 |
1.8 Volt Intel StrataFlash Wireless Memory with 3.0-Volt I/O (L30) 8M X 16 FLASH 1.8V PROM, PBGA80
|
Intel, Corp.
|
| MB81ES171625-15WFKT-X MB81ES173225-15WFKT-X |
SINGLE DATA RATE I/F FCRAM Consumer/Embedded Application Specific Memory for SiP 单数据传输速率女的FCRAM消费/嵌入式SIP应用程序特定的内
SINGLE DATA RATE I/F FCRAM Consumer/Embedded Application Specific Memory for SiP 1M X 16 SYNCHRONOUS DRAM, 12 ns, UUC84
SINGLE DATA RATE I/F FCRAM Consumer/Embedded Application Specific Memory for SiP 512K X 32 SYNCHRONOUS DRAM, 12 ns, UUC84
|
Fujitsu, Ltd.
Fujitsu Limited
Fujitsu Component Limited.
|
