| PART |
Description |
Maker |
| STF28N60DM2 |
Extremely high dv/dt ruggedness
|
STMicroelectronics
|
| P650-U260-WH P650-U180-WH P850-U180-WH P850-U260-W |
Extremely high speed performance
|
Bourns Electronic Solutions
|
| FDG312P |
High performance trench technology for extremely low R
|
TY Semiconductor Co., Ltd
|
| CMPTA44 |
NPN SILICON EXTREMELY HIGH VOLTAGE TRANSISTOR
|
CENTRAL[Central Semiconductor Corp]
|
| FDC6318P |
High performance trench technology for extremely low R
|
TY Semiconductor Co., Ltd
|
| FDN327N |
High performance trench technology for extremely low RDS(ON)
|
TY Semiconductor Co., Ltd
|
| CES2310 |
High dense cell design for extremely low RDS(ON).
|
TY Semiconductor Co., Ltd
|
| AP2121 AP2121AK-1.8TRE1 AP2121AK-3.0TRE1 AP2121AK- |
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR
|
BCD Semiconductor Manuf...
BCD Semiconductor Manufacturing Limited
http://
|
| CES2308 |
High dense cell design for extremely low RDS(ON).
|
TY Semiconductor Co., Ltd
|
| CZTA9610 CZTA96-15 |
SURFACE MOUNT EXTREMELY HIGH VOLTAGE PNP SILICON TRANSISTOR
|
Central Semiconductor Corp
Central Semiconductor C...
|
