PART |
Description |
Maker |
NAND01G-B |
1 Gbit, 2 Gbit, 4 Gbit, 8 Gbit 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
|
STMicroelectronics
|
TC58NVG4D2ETA00 |
16 GBIT (2G X 8 BIT) CMOS NAND E2PROM
|
Toshiba
|
TC58NVG2D4BFT00 |
4 GBIT (512M X 8 BIT) CMOS NAND E2PROM
|
Toshiba
|
TC58DVG02A1FT00 TC58DVG02A TC58DVG02A1FT |
Flash - NAND TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1-GBIT (128M*8 BITS) CMOS NAND E2PROM
|
TOSHIBA[Toshiba Semiconductor]
|
TC58NVG0S3AFT00 |
1 GBit CMOS NAND EPROM
|
Toshiba
|
NAND02GW3B2BN1E NAND02GW3B2BN1F NAND02GW3B2BN6E NA |
1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
|
Numonyx B.V
|
H27U8G8T2B |
8 Gbit (1024 M x 8 bit) NAND Flash
|
Hynix
|
H27UAG8T2A |
16 Gbit (2048 M x 8 bit) NAND Flash
|
Hynix
|
NAND16GW3C4B NAND08GW3C4BN1E NAND16GW3C4BN1E NAND0 |
8 or 16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory
|
Numonyx B.V
|
NAND08GW3C2BZL1E NAND16GW3C2BZL1E NAND08GW3C2BZL1F |
8 or 16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory
|
Numonyx B.V
|
CD4023BMS CD4012BMS CD4011BMS FN3079 CD4023B CD401 |
From old datasheet system CMOS NAND Gates NAND, 3-Input, Triple, Rad-Hard, CMOS, Logic NAND, 2-Input, Quad, Rad-Hard, CMOS, Logic NAND, 4-Input, Dual, Rad-Hard, CMOS, Logic
|
INTERSIL[Intersil Corporation]
|
CD4011BT CD4011BDTR 5962R9662101TXC 5962R9662101TC |
16-Bit Bus Transceiver And Register With 3-State Outputs 56-SSOP -40 to 85 4000/14000/40000 SERIES, QUAD 2-INPUT NAND GATE, CDIP14 CMOS Quad 2-Input NAND Gate
|
Intersil, Corp. Intersil Corporation
|