| PART |
Description |
Maker |
| Q6025R5 Q7015R5 Q5006L4 |
TRIAC|500V V(DRM)|6A I(T)RMS|TO-220AB 可控硅| 500V五（DRM）的| 6A条口（T）的有效值| TO - 220AB现有
TRIAC|700V V(DRM)|15A I(T)RMS|TO-220 可控硅| 700V的五（DRM）的| 15A条口（T）的有效值|20
TRIAC|600VV(DRM)|25AI(T)RMS|TO-200AB
|
Motorola Mobility Holdings, Inc.
|
| IPT240 I3PT430 ISPT640 IPT130 |
TRIAC|200V V(DRM)|40A I(T)RMS|PRESS-19
TRIAC|400V V(DRM)|30A I(T)RMS|FBASE-R-HW30 可控硅| 400V五（DRM）的| 30A条口（T）的有效值| FBASE受体- HW30
TRIAC|600V V(DRM)|40A I(T)RMS|IST-3RT-1/4 可控硅| 600V的五（DRM）的| 40A条口（T）的有效值|北京时间- 3RT - 1 / 4
TRIAC|100V V(DRM)|30A I(T)RMS|PRESS-19
|
Electronic Theatre Controls, Inc.
|
| SSG50C120 SSG50C60 SSG50C100 SSG50C40 |
TRIAC|1.2KV V(DRM)|50A I(T)RMS|TO-208VARM8
TRIAC|600V V(DRM)|50A I(T)RMS|TO-208VARM8 可控硅| 600V的五（DRM）的| 50A条口（T）的有效值|08VARM8
TRIAC|1KV V(DRM)|50A I(T)RMS|TO-208VARM8
TRIAC|400V V(DRM)|50A I(T)RMS|TO-208VARM8
|
|
| RCR150BX12 RCR150BX16 RCR150BX20 RCR150BX24 FR500A |
THYRISTOR|REVERSE-CONDUCTING|600V V(DRM)|STF-M20
THYRISTOR|REVERSE-CONDUCTING|800V V(DRM)|STF-M20
THYRISTOR|REVERSE-CONDUCTING|1KV V(DRM)|STF-M20
THYRISTOR|REVERSE-CONDUCTING|1.2KV V(DRM)|STF-M20
THYRISTOR|REVERSE-CONDUCTING|600V V(DRM)|TO-200VAR84 晶闸管|反向导电| 600V的五（DRM）的|00VAR84
THYRISTOR|REVERSE-CONDUCTING|600V V(DRM)|TO-200VAR50
THYRISTOR|REVERSE-CONDUCTING|600V V(DRM)|TO-200AB
THYRISTOR|REVERSE-CONDUCTING|800V V(DRM)|TO-200VAR50
|
Rochester Electronics, LLC
|
| BTA06-700C BTA06-400B BTA06-400C BTA06-700B BTB06- |
TRIAC|700V V(DRM)|6A I(T)RMS|TO-220
TRIAC|400V V(DRM)|6A I(T)RMS|TO-220 可控硅| 400V五（DRM）的| 6A条口T）的有效值|20
|
Linear Technology, Corp.
|
| BTA04-800S BTA04-200S BTB04-800S |
TRIAC|200V V(DRM)|4A I(T)RMS|TO-220
TRIAC|800V V(DRM)|4A I(T)RMS|TO-220 可控硅| 800V的五（DRM）的| 4A条口（T）的有效值|20
|
STMicroelectronics N.V.
|
| SSG70C60 SSG70C40 SSG70C80 SSG70C100 |
TRIAC|600V V(DRM)|70A I(T)RMS|TO-209VARM12
TRIAC|400V V(DRM)|70A I(T)RMS|TO-209VARM12 可控硅| 400V五（DRM）的|0A口（T）的有效值|09VARM12
TRIAC|800V V(DRM)|70A I(T)RMS|TO-209VARM12 可控硅| 800V的五（DRM）的|0A口（T）的有效值|09VARM12
TRIAC|1KV V(DRM)|70A I(T)RMS|TO-209VARM12 可控硅| 1KV交五（DRM）的|0A口（T）的有效值|09VARM12
|
Microsemi, Corp.
|
| BT137B600T/R BT137B800T/R |
TRIAC|600V V(DRM)|8A I(T)RMS|SOT-404
TRIAC|800V V(DRM)|8A I(T)RMS|SOT-404 可控硅| 800V的五（DRM）的| 8A条口（T）的有效值|采用SOT - 404
|
Won-Top Electronics Co., Ltd.
|
| BTA140B500T/R |
TRIAC|500V V(DRM)|25A I(T)RMS|SOT-404 可控硅| 500V五（DRM）的| 25A条口（T）的有效值|采用SOT - 404
|
NXP Semiconductors N.V.
|
| 2N1794 2N1795 2N1806 2N1807 2N1914 2N1915 2N1916 2 |
V(rrm/drm): 150V; 110A RMS SCR. For general puspose phase control applications
V(rrm/drm): 200V; 110A RMS SCR. For general puspose phase control applications
V(rrm/drm): 720V; 110A RMS SCR. For general puspose phase control applications
V(rrm/drm): 840V; 110A RMS SCR. For general puspose phase control applications
V(rrm/drm): 250V; 110A RMS SCR. For general puspose phase control applications
V(rrm/drm): 300V; 110A RMS SCR. For general puspose phase control applications
V(rrm/drm): 400V; 110A RMS SCR. For general puspose phase control applications
V(rrm/drm): 100V; 110A RMS SCR. For general puspose phase control applications
V(rrm/drm): 50V; 110A RMS SCR. For general puspose phase control applications
V(rrm/drm): 25V; 110A RMS SCR. For general puspose phase control applications
V(rrm/drm): 600V; 110A RMS SCR. For general puspose phase control applications
|
International Rectifier
|
