| PART |
Description |
Maker |
| AP2121AK-1.5TRE1 AP2121AK-2.5TRE1 AP2121AK-2.8TRE1 |
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR
|
BCD Semiconductor Manufacturing Limited
BCDSEMI
|
| AP2120N-1.8TRG1 AP2120N-2.5TRG1 AP2120N-5.0TRG1 AP |
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR
|
Diodes
|
| AP2126K-3.3TRG1 |
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
|
BCD Semiconductor Manufacturing Limited
|
| AP2129K-1.0TRG1 AP2129K-1.2TRG1 AP2129K-3.3TRG1 AP |
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
|
BCD Semiconductor Manufacturing Limited
|
| FDG316P |
High performance trench technology for extremely low
|
TY Semiconductor Co., Ltd
|
| FDC6312P |
High performance trench technology for extremely low RDS(ON)
|
TY Semiconductor Co., Ltd
|
| CES2307 |
High dense cell design for extremely low RDS(ON)
|
TY Semiconductor Co., Ltd
|
| CES2305 |
High dense cell design for extremely low RDS(ON)
|
TY Semiconductor Co., Ltd
|
| SI2301 |
High dense cell design for extremely low RDS(ON)
|
MAKO SEMICONDUCTOR CO.,...
|
| FDG311N |
High performance trench technology for extremely low RDS(ON).
|
TY Semiconductor Co., Ltd
|
| CES2310 |
High dense cell design for extremely low RDS(ON).
|
TY Semiconductor Co., Ltd
|
