| PART |
Description |
Maker |
| BUY40 |
Bipolar NPN Device in a Hermetically sealed TO3
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | STR-10
|
Seme LAB
|
| BDX94 |
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 10A I(C) | TO-3
Bipolar PNP Device in a Hermetically sealed TO3 Metal Package
|
Seme LAB
|
| 2SD1816S-TL-E 2SD1816S-H 2SD1816S-E 2SD1816S-TL-H |
Bipolar Transistor
Bipolar Transistor (-)100V, (-)4A, Low VCE(sat), (PNP)NPN Single TP/TP-FA
|
ON Semiconductor
|
| IRFP243R IRFF122R IRFF123R IRF621R IRFP140R IRFF12 |
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 20A I(D) | TO-247
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 5A I(D) | TO-205AF
TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 5A I(D) | TO-205AF
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 5A I(D) | TO-220AB
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 31A I(D) | TO-247
TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 6A I(D) | TO-205AF
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-205AF
TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 8A I(D) | TO-205AF 晶体管| MOSFET的| N沟道| 80V的五（巴西）直| 8A条（丁）|05AF
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 4.9A I(D) | TO-220AB 晶体管| MOSFET的| N沟道| 100V的五（巴西）直| 4.9AI（四）| TO - 220AB现有
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 1A I(D) | TO-250VAR 晶体管| MOSFET的| N沟道| 100V的五（巴西）直| 1A条（丁）|50VAR
TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 28A I(D) | TO-204AE 晶体管| MOSFET的| N沟道| 80V的五（巴西）直| 28A条（丁）|04AE
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 600MA I(D) | TO-250VAR 晶体管| MOSFET的| N沟道| 150伏五（巴西）直| 600毫安（丁）|50VAR
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 25A I(D) | TO-204AE 晶体管| MOSFET的| N沟道| 100V的五（巴西）直|5A条（丁）|04AE
|
Black Box, Corp.
Bourns, Inc.
Vishay Intertechnology, Inc.
Samsung Semiconductor Co., Ltd.
3M Company
|
| ECG191 ECG189 ECG172A ECG179 ECG193 ECG184 |
Fan Screen kits; Material: Stainless steel wire mesh; Adaptation Machine: For both AC SAN ACE and AC New SAN ACE (except for models with an alarm
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 2A I(C) | TO-202VAR
TRANSISTOR | BJT | DARLINGTON | NPN | 40V V(BR)CEO | 300MA I(C) | TO-92 晶体管|晶体管|达林顿|叩| 40V的五（巴西）总裁| 300mA的一（c）|2
TRANSISTOR | BJT | PNP | 90V V(BR)CEO | 25A I(C) | TO-3 晶体管|晶体管|进步党| 90V的五（巴西）总裁|5A一（c）|
TRANSISTOR | BJT | PNP | 70V V(BR)CEO | 1A I(C) | TO-92VAR 晶体管|晶体管|进步党| 70V的五（巴西）总裁| 1A条一（c）|2VAR
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 4A I(C) | TO-126
|
DB Lectro, Inc.
SIEMENS AG
|
| TWA8-48S15 TWA8-48-5 TWA8-48S3.3 TWA8-24S5 TWA8-48 |
Hybrid emitter switched bipolar transistor ESBT® 900 V - 20 A - 0.06 Ohm
Emitter switched bipolar transistor ESBT® 1200 V - 8 A - 0.10 Ohm
Hybrid emitter switched bipolar transistor ESBT 2200 V - 7 A - 0.07 Ohm power module
Hybrid emitter switched bipolar transistor ESBT 2200 V - 3 A - 0.33 Ohm
Emitter switched bipolar transistor ESBT® 1700V - 4A - 0.17 Ohm
Hybrid emitter switched bipolar transistor ESBT 1500V - 8A - 0.075 Ohm 模拟IC
Analog IC 模拟IC
|
Bourns, Inc.
|
| CFD2374 CFD2374Q CFB1548 CFB1548A CFB1548AP CFB154 |
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 70 - 250 hFE. Complementary CFB1548
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 70 - 150 hFE. Complementary CFB1548Q
2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 70 - 250 hFE. Complementary CFD2374
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 70 - 250 hFE. Complementary CFD2374A
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 120 - 250 hFE. Complementary CFD2374AP
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 70 - 150 hFE. Complementary CFD2374AQ
2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 120 - 250 hFE. Complementary CFD2374P
2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 70 - 250 hFE. Complementary CFB1548A
2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 120 - 250 hFE. Complementary CFB1548AP
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 120 - 250 hFE. Complementary CFB1548P
2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 70 - 150 hFE. Complementary CFB1548AQ
|
Continental Device India Limited
|
| 2SB560 2SD438 2SD438F 2SD438E 2SB560E |
Low-Frequency Power Amp Applications
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 1A I(C) | TO-92VAR 晶体管|晶体管|叩| 80V的五（巴西）总裁| 1A条一（c）|2VAR
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | TO-92VAR 晶体管|晶体管|进步党| 80V的五（巴西）总裁| 1A条一（c）|2VAR
|
http://
SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
Sanyo Electric Co., Ltd.
|
| FMMT62006 FMMT620TC 620 FMMT620 FMMT620TA |
SuperSOT?/a> 80V NPN SILICON LOW SATURATION TRANSISTOR
SuperSOT 80V NPN SILICON LOW SATURATION TRANSISTOR
SuperSOT⑩ 80V NPN SILICON LOW SATURATION TRANSISTOR
|
http://
ZETEX[Zetex Semiconductors]
|
| 2SD1933 |
Power Transistor (-80V/ -4A)
|
ROHM
|
| 2SD189809 |
Power Transistor (80V, 1A)
|
Rohm
|
