| PART |
Description |
Maker |
| SGU20N40L |
Wide Noise Immunity IGBT Suitable for Strobe Flash applications(应用于闸门闪光的抗噪声绝缘栅双极晶体IGBT)) 400 V, N-CHANNEL IGBT, TO-251
|
Fairchild Semiconductor, Corp.
|
| GT8G151 |
IGBT for strobe flash
|
TOSHIBA
|
| GT5G134 |
IGBT for strobe flash
|
TOSHIBA
|
| RJP4301APP-M0-15 |
Nch IGBT for Strobe Flash
|
Renesas Electronics Corporation
|
| RJP4010AGE |
Nch IGBT for Strobe Flash
|
Renesas Electronics Corporation
|
| RJP4002ASA-00-Q0 RJP4002ASA |
Nch IGBT for Strobe Flash
|
Renesas Electronics Corporation
|
| GT25G101SM06 GT25G101SM |
SILICON N−CHANNEL IGBT STROBE FLASH APPLICATIONS
|
Toshiba Semiconductor
|
| GT20G102 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS
|
TOSHIBA
|
| GT5G131 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS
|
TOSHIBA
|
| 2SA1357 E000517 |
TRANSISTOR (STROBE FLASH/ AUDIO POWER AMPLIFIER APPLICATIONS)
TRANSISTOR (STROBE FLASH, AUDIO POWER AMPLIFIER APPLICATIONS)
STROBE FLASH APPLICATIONS AUDIO POWER AMPLIFIERAPPLICATIONS
From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SC4685 E000978 |
NPN EPITAXIAL TYPE (STROBE FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)
From old datasheet system
STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS
|
Toshiba Semiconductor
|
| 2SC3072 |
TRANSISTOR (STROBE FLASH/ MEDIUM POWER AMPLIFIER APPLICATIONS)
Transistor Silicon NPN Epitaxial Type (PCT process) Strobe Flash Applications Medium Power Amplifier Applications
|
Toshiba Semiconductor
|
