| PART |
Description |
Maker |
| KM416RD8AC KM418RD2AC KM418RD2AD KM418RD2C KM418RD |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz).
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz).
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 800 Mbps(400 MHz).
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| MSM5718B70 |
18-Megabit RDRAM (2M x 9)
|
OKI electronic components
|
| MSM5718B70 |
18-Megabit RDRAM (2M x 9)
|
OKI electronic componets
|
| K4R271669F |
128Mbit RDRAM(F-die)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K4R881869I-DC |
Direct RDRAM Product Guide
|
Samsung semiconductor
|
| K4R881869D K4R571669D |
256/288Mbit RDRAM(D-die)
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K4R571669D |
256/288Mbit RDRAM(D-die)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| MSM5716C50 |
(MSM5716C50 / MSM5718C50 / MSM5764802) 16M / 18M / 64M Concurrent RDRAM
|
OKI
|
| MT6V16M16 MT6V16M18 |
512K x 16 x 32 banks RDRAM(512K x 16 x 32同步动态RAM)
512K x 18 x 32 banks RDRAM(512K x 18 x 32同步动态RAM)
|
Micron Technology, Inc.
|
| HYMR16416 HYMR16418H-840 |
32Mx16|2.5V|40|-|Direct RDRAM - 64MB RIMM
64M X 18 DIRECT RAMBUS DRAM MODULE, 40 ns, DMA184 RIMM-184
|
Hynix Semiconductor, Inc.
|
| HYR166449G-845 HYR163249G HYR163249G-653 HYR163249 |
?64MB RIMM Module (32Mx16) PC800-45?
Direct RDRAM RIMM Modules (with 288 Mbit RDRAMs) 直接的RDRAM RIMM的模块（88兆RDRAMs
128MB RIMM Module (64Mx16) PC800-40
RDRAMModules - 128MB RIMM Module (64Mx16) PC600-53 Discontinued
RDRAMModules - 64MB RIMM Module (32Mx16) PC800-45 Discontinued
RDRAMModules - 128MB RIMM Module (64Mx16) PC800-45 Discontinued
|
INFINEON[Infineon Technologies AG]
|
