| PART |
Description |
Maker |
| S3902 S3903 S3903-1024Q S3903-512Q |
MOSFET, Switching; VDSS (V): 400; ID (A): 17; Pch : -; RDS (ON) typ. (ohm) @10V: 0.25; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V
MOSFET, Switching; VDSS (V): 450; ID (A): 14; Pch : -; RDS (ON) typ. (ohm) @10V: 0.43; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V
NMOS linear image sensor Current output, high UV sensitivity, excellent linearity, low power consumption
MOSFET, Switching; VDSS (V): 450; ID (A): 22; Pch : -; RDS (ON) typ. (ohm) @10V: 0.25; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1800; toff (µs) typ: -; Package: TO-3P
|
Hamamatsu Photonics
|
| S4111-46Q S4111-16Q S4111-16R S4114-46Q S4114-35Q |
MOSFET, Switching; VDSS (V): 500; ID (A): 19; Pch : 35; RDS (ON) typ. (ohm) @10V: 0.325; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1800; toff (µs) typ: 0.093; Package: TO-220FN
MOSFET, Switching; VDSS (V): 500; ID (A): 25; Pch : -; RDS (ON) typ. (ohm) @10V: 0.21; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2600; toff (µs) typ: 103; Package: TO-3P
Si photodiode array 16, 35, 46 element Si photodiode array for UV to NIR 硅光电二极管阵列16356元素硅的紫外到近红外光电二极管阵
|
Hamamatsu Photonics K.K.
|
| CCR1 CCR CCR1Z-1K2KI CCR1Z-1K8KI CCR1Z-1K5KI CCR1Z |
RESISTOR, CARBON COMPOSITION, 1 W, 10 %, 900 ppm, 390 ohm, SURFACE MOUNT
RESISTOR, CARBON COMPOSITION, 1 W, 10 %, 900 ppm, 270 ohm, SURFACE MOUNT
RESISTOR, CARBON COMPOSITION, 1 W, 10 %, 900 ppm, 560 ohm, SURFACE MOUNT
RESISTOR, CARBON COMPOSITION, 1 W, 10 %, 1300 ppm, 2200 ohm, SURFACE MOUNT
RESISTOR, CARBON COMPOSITION, 1 W, 10 %, 900 ppm, 680 ohm, SURFACE MOUNT
RESISTOR, CARBON COMPOSITION, 1 W, 10 %, 900 ppm, 820 ohm, SURFACE MOUNT
RESISTOR, CARBON COMPOSITION, 1 W, 10 %, 1300 ppm, 10000 ohm, SURFACE MOUNT
RESISTOR, CARBON COMPOSITION, 1 W, 10 %, 1300 ppm, 2700 ohm, SURFACE MOUNT
RESISTOR, CARBON COMPOSITION, 1 W, 10 %, 1300 ppm, 3300 ohm, SURFACE MOUNT
RESISTOR, CARBON COMPOSITION, 1 W, 10 %, 900 ppm, 220 ohm, SURFACE MOUNT
RESISTOR, CARBON COMPOSITION, 1 W, 10 %, 900 ppm, 330 ohm, SURFACE MOUNT
RESISTOR, CARBON COMPOSITION, 1 W, 10 %, 900 ppm, 470 ohm, SURFACE MOUNT
RESISTOR, CARBON COMPOSITION, 1 W, 10 %, 1300 ppm, 22000 ohm, SURFACE MOUNT
RESISTOR, CARBON COMPOSITION, 1 W, 10 %, 1300 ppm, 12000 ohm, SURFACE MOUNT
RESISTOR, CARBON COMPOSITION, 1 W, 10 %, 1300 ppm, 18000 ohm, SURFACE MOUNT
RESISTOR, CARBON COMPOSITION, 1 W, 10 %, 1300 ppm, 15000 ohm, SURFACE MOUNT
RESISTOR, CARBON COMPOSITION, 1 W, 10 %, 1300 ppm, 1000 ohm, SURFACE MOUNT
RESISTOR, CARBON COMPOSITION, 1 W, 10 %, 1300 ppm, 1500 ohm, SURFACE MOUNT
RESISTOR, CARBON COMPOSITION, 1 W, 10 %, 1300 ppm, 1800 ohm, SURFACE MOUNT
RESISTOR, CARBON COMPOSITION, 1 W, 10 %, 1300 ppm, 1200 ohm, SURFACE MOUNT
Carbon Ceramic Resistors
|
Welwyn Components, Ltd.
Welwyn Components Limited
TT Electronics / Welwyn
|
| STW21N90K5 STB21N90K5 STP21N90K5 |
N-channel 900 V, 0.25 Ω typ., 18.5 A Zener-protected SuperMESH 5 Power MOSFET in a D2PAK, TO-220FP, TO-220 and TO-247 packages
N-channel 900 V, 0.25 Ω typ., 18.5 A Zener-protected SuperMESH?5 Power MOSFET in a D2PAK, TO-220FP, TO-220 and TO-247 packages
|
STMicroelectronics
|
| STP6NB90FP STP6NB90 |
5.8 A, 900 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
N-CHANNEL 900V - 1.7 OHM - 5.8A - TO-220/TO-220FP POWERMESH MOSFET
|
STMICROELECTRONICS
ST Microelectronics
|
| STU6N60M2 STF6N60M2 STP6N60M2 |
N-channel 600 V, 1.06 Ohm typ., 4.5 A MDmesh II Plus(TM) low Qg Power MOSFET in IPAK package
N-channel 600 V, 1.06 Ohm typ., 4.5 A MDmesh II Plus(TM) low Qg Power MOSFET in TO-220FP package
N-channel 600 V, 1.06 Ohm typ., 4.5 A MDmesh II Plus(TM) low Qg Power MOSFET in TO-220 package
|
ST Microelectronics
|
| STF6N65M2 STU6N65M2 |
N-channel 650 V, 1.2 Ohm typ., 4 A MDmesh M2 Power MOSFET in TO-220FP package
N-channel 650 V, 1.2 Ohm typ., 4 A MDmesh M2 Power MOSFET in IPAK package
|
ST Microelectronics
|
| 2SK1942-01 |
N-channel MOS-FET 3 A, 900 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
|
| IPW90R120C3 |
36 A, 900 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
|
INFINEON TECHNOLOGIES AG
|
| IPW90R340C3 |
15 A, 900 V, 0.34 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
|
INFINEON TECHNOLOGIES AG
|
| STW12N120K5 STH12N120K5-2 |
N-channel 1200 V, 0.58 Ohm typ., 12 A Zener-protected SuperMESH(TM) 5 Power MOSFET in TO-247 package
N-channel 1200 V, 0.58 Ohm typ., 12 A Zener-protected SuperMESH(TM) 5 Power MOSFET in H2PAK-2 package
|
ST Microelectronics
|
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