| PART |
Description |
Maker |
| BFP193W |
RF-Bipolar - For low noise, high-gain amplifiers up to 2 GHz and linear broadband amplifiers
NPN Silicon RF Transistor
|
INFINEON[Infineon Technologies AG]
|
| NE5510179A-T1 NE5510179A |
3.5V的操作硅射频功率MOSFET1.9 GHz的输电功
3.5V OPERATION SILICON RF POWER MOSFET FOR 1.9 GHZ TRANSMISSION AMPLIFIERS
3.5 V OPERATION SILICON RF POWER MOSFET FOR 1.9 GHZ TRANSMISSION AMPLIFIERS
|
NEC Corp.
NEC[NEC]
CEL[California Eastern Labs]
|
| TA020-060-40-33 |
2.0 ?6.0 GHz 33dBm Amplifiers
|
Transcom, Inc.
|
| DG03-166 |
MONOLITHIC AMPLIFIERS 50з BROADBAND DC to 8 GHz
|
MINI[Mini-Circuits]
|
| 87310B 87300C 87300D 87301B 87300B 87301D 87301C 8 |
87310B Coaxial Hybrid Coupler, 90 Degree, 1 GHz to 18 GHz
87300C Coaxial Directional Coupler, 1 GHz to 26.5 GHz
87300D Coaxial Directional Coupler, 6 to 26.5 GHz
87301B Coaxial Directional Coupler, 10 to 46 GHz
87300B Coaxial Directional Coupler, 1 GHz to 20 GHz
87301D Coaxial Directional Coupler, 1 GHz to 40 GHz
87301C Coaxial Directional Coupler, 10 to 50 GHz
87301E Coaxial Directional Coupler, 2 GHz to 50 GHz
|
Agilent (Hewlett-Packard)
|
| HMC552LP4 HMC552LP4E |
GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER, 1.6 - 3.0 GHz
Analog & Mixed-Signal Processing -> Amplifiers
|
Hittite Microwave Corporation
|
| Q62702-F659 BFQ29 BFQ29P |
From old datasheet system
NPN Silicon RF Transistor (For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA.)
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| 8485A 8485D Q8486D W8486A R8486A Q8486A R8486D E44 |
8485A Power Sensor, 50 MHz to 26.5 GHz
8485D Diode Power Sensor, 50 MHz to 26.5 GHz
Q8486D Waveguide Power Sensor, 33 GHz to 50 GHz
W8486A Waveguide Power Sensor, 75 GHz to 110 GHz
R8486A Thermocouple Waveguide Power Sensor, 26.5 GHz to 40 GHz
Q8486A Thermocouple Waveguide Power Sensor, 33 GHz to 50 GHz
R8486D Waveguide Power Sensor, 26.5 GHz to 40 GHz
E4412A Wide Dynamic Range Power Sensor, E-Series
E4413A Wide Dynamic Range Power Sensor, E-Series
V8486A V-band Power Sensor, 50 GHz to 75 GHz
8482B High-Power Sensor, 100 kHz to 4.2 GHz, 25W
8487A Power Sensor, 50 MHz to 50 GHz
8482H Power Sensor, 100 kHz to 4.2 GHz, 3 W
8481D Diode Power Sensor, 10 MHz to 18 GHz
|
Agilent (Hewlett-Packard)
|
| CRF-22010-001 CRF-22010-101 |
62.5mW; 120VDC; SiC RF power MESFET. For class A,AB amplifiers; TDMA, EDGE, CDMA, W-CDMA, broadband amplifiers, CATV amplifiers, MMDS
|
CREE POWER
|
| BFG19S |
RF-Bipolar - For low noise, low distortion broadband amplifiers in wireless systems up to 1.5 GHz
|
Infineon
|
| RFS1006 PRFS-1006-0007 PRFS-1006-0008 PRFS-1006-00 |
3.4-3.6 GHz Power Amplifier 3400 MHz - 3600 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
3.4-3.6 GHz Power Amplifier 3号至三月六日GHz功率放大
Single-band power amplifiers
The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in a transmit applications in the 3.4-3.6 ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
|
